Abstract: A structure using a thin film type solar cell is disclosed, which comprises an external plate exposed to solar rays; a first adhesive layer provided on an opposite surface of a surface of the external plate, which is exposed to the solar rays; a thin film type solar cell provided on the first adhesive layer; a second adhesive layer provided on the thin film type solar cell; and a protection layer provided on the second adhesive layer, wherein the second adhesive layer is made of a colored adhesive material.

Abstract: Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Abstract: Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a plurality of transfer pipes for individually transferring the first and the second reactive gas and the carrier gas to the vacuum chamber; an energy supplier, provided inside the transfer pipe for transferring the first and the second reactive gas, for supplying excitation energy to generate excited plasma to ionize the first reactive gas; and a valve controller, established in the transfer pipes, for alternately feeding into the vacuum chamber the second reactive gas and the first reactive gas ionized by the plasma excited in the energy supplier, at predetermined time intervals.

Abstract: The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor, provided within the reaction chamber to hold the wafers and has of a plurality of wafer stations. A plurality of wafer seating units are provided in the wafer stations, and seat the wafers in the wafer stations. A gas ejecting unit is provided within the reaction chamber, and ejects reaction gases onto the reaction surfaces of the wafers. A gas feeding unit feeds the reaction gases to the gas ejecting unit at predetermined time intervals so as to allow the gas ejecting unit to alternately eject the reaction gases through each of two gas outlets into the reaction chamber. A susceptor drive unit rotates the susceptor at a predetermined velocity and vertically moves the susceptor to an upper optimal reaction position close to the ceiling of the reaction chamber.