Patents Assigned to Morgan Semiconductor, Inc.
  • Alloy of silicon and gallium arsenide
    Patent number: 4169727
    Abstract: Disclosed is a single phase crystalline alloy of silicon and gallium arsenide and methods of making same. The alloy is compounded by reacting elemental gallium, arsenic and silicon in the atomic stoichiometry desired to produce a material which is transmissive in the infrared wavelengths.
    Type: Grant
    Filed: May 1, 1978
    Date of Patent: October 2, 1979
    Assignee: Morgan Semiconductor, Inc.
    Inventor: Weldon B. Morgan