Abstract: A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops.

Abstract: A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops.