Abstract: A method of facilitating formation of a via in an inorganic substrate may include applying a single-sided acidic wet etching process to a first surface of the inorganic substrate in a first state in which the inorganic substrate has a mask layer set covering a second surface of the inorganic substrate; and applying a double-sided acidic wet etching process to the first surface and the second surface of the inorganic substrate after completion of the single-sided acidic wet etching process and in a second state in which the inorganic substrate has had the mask layer set removed from the second surface of the inorganic substrate.

Abstract: An inorganic substrate with an improved via shape and methods for facilitating formation of such improved via shape are disclosed. A double-sided opening process may be applied to an inorganic substrate to form openings at the ends of a damage track previously formed in the inorganic substrate. One side of the inorganic substrate may then be sealed, such as by being temporarily bonded to a carrier or blocking substrate, so that a single-sided opening process may be applied to the other unsealed or unblocked surface of the inorganic substrate. The single-sided opening process may enlarge at least one of the openings formed by the double-sided opening process and may enlarge a channel between the openings to form a via having an advantageous shape.

Abstract: Processed inorganic wafers and processing a wafer stack including an abrasive process are disclosed. A wafer stack may be formed at least by performing a temporary bonding process to temporarily bond at least a first inorganic wafer to a first surface of a handle wafer. The handle wafer may include at least one inorganic wafer, and the temporary bonding process may include formation of an adhesion layer between the first inorganic wafer and the first surface of the handle wafer. The adhesion layer may include a vacuum deposited carbonaceous film with a thickness between 1 nm and 100 nm, inclusive. An abrasive process may be applied to at least part of the wafer stack, and the abrasive process may reduce a thickness of the first inorganic wafer of the wafer stack. The first inorganic wafer may be debonded from the handle wafer after applying the abrasive process.