Abstract: A method of manufacturing a semiconductor includes providing a mold defining a planar capillary space; placing a measure of precursor in fluid communication with the capillary space; creating a vacuum around the mold and within the planar capillary space; melting the precursor; allowing the melted precursor to flow into the capillary space; and cooling the melted precursor within the mold such that the precursor forms a semiconductor, the operations of melting the precursor, allowing the precursor to flow into the capillary space, and cooling the melted precursor occurring in the vacuum.

Abstract: A thermoelectric material to exploit a unidirectional thermal gradient for the production of electrical power, comprising a body fabricated from milled silicon alloyed with a dopant and sintered at a temperature below the melting point of silicon.

Abstract: Conductive material is combined with other substances to form a composite material for use as a conductive back face substrate for a thin silicon wafer solar cell. In at least one embodiment, a conductive composite substrate material is fabricated by filling granular conductive material with a mineral or ceramic or other small particulate with a low CTE; the composite is cast and fired so that it has an electrically conductive continuous phase and a discontinuous phase that will control and match the CTE of the substrate to be equal to or close to that of silicon, thereby diminishing the effects of bowing from CTE-mismatch.

Abstract: A method for manufacturing a semiconductor is disclosed. A mold is providing having an interior defining a planar capillary space. A measure of precursor is placed in fluid communication with the capillary space. The precursor is then melted, and the melted precursor is allowed to flow into the capillary space. The melted precursor is then allowed to cool to form a semiconductor.

Abstract: Thermally conductive, electrically insulating epoxy molding compounds that use milled silicon as a filler material, and methods and processes for making the same. Some example embodiments of the present invention comprise the use of a passivation agent, for example ethyl silicate, to deposit a thin layer of glass on the surfaces of the powders as the powders are milled, creating an attractive surface dielectric property on these surfaces.

Abstract: A thermoelectric semiconducting assembly. Two parallel plates, a first plate and a second plate, are spaced apart. A plurality of pellets are fitted into said first plate and into said second plate, each said pellet comprising a body, a first cap, and a second cap, said body including a silicon material, said first cap and said second cap including an electrically resistive ceramic material, each pellet in said second plate being connected to a pellet in said first plate. Each pellet includes a doped body, wherein half of said pellets are doped with a p-type dopant to form a p-type pellet and half of said pellets are doped with an n-type dopant to form an n-type pellet. Each plate includes p-type pellets and n-type pellets in an alternating pattern, and each p-type pellet in said first plate connects with an n-type pellet in said second plate, and wherein each n-type pellet in said first plate connects with a p-type pellet in said second plate.

Abstract: A method for manufacturing a solar cell is disclosed. A conductive layer is introduced into a mold having an interior defining a shape of a solar cell. A planar capillary space is formed along the conductive layer. A measure of silicon is placed in fluid communication with the capillary space. The silicon is melted and allowed to flow into the capillary space. The melted silicon is then cooled within the capillary space such that the silicon forms a p-n junction along the conductive layer.

Abstract: Conductive material is combined with other substances to form a composite material for use as a conductive back face substrate for a thin silicon wafer solar cell. In at least one embodiment, a conductive composite substrate material is fabricated by filling granular conductive material with a mineral or ceramic or other small particulate with a low CTE; the composite is cast and fired so that it has an electrically conductive continuous phase and a discontinuous phase that will control and match the CTE of the substrate to be equal to or close to that of silicon, thereby diminishing the effects of bowing from CTE-mismatch.

Abstract: A method for manufacturing a solar cell is disclosed. A conductive layer is introduced into a mold having an interior defining a shape of a solar cell. A planar capillary space is formed along the conductive layer. A measure of silicon is placed in fluid communication with the capillary space. The silicon is melted and allowed to flow into the capillary space. The melted silicon is then cooled within the capillary space such that the silicon forms a p-n junction along the conductive layer.

Abstract: A method for manufacturing a semiconductor is disclosed. A mold is providing having an interior defining a planar capillary space. A measure of precursor is placed in fluid communication with the capillary space. The precursor is then melted, and the melted precursor is allowed to flow into the capillary space. The melted precursor is then allowed to cool to form a semiconductor.