Abstract: A semiconductor device and its method of fabrication are disclosed. The method includes forming a first well region in a semiconductor substrate. The semiconductor substrate includes a first doped region below the first well region. The first well region and the first doped region are doped with a first type dopant and the first well region is electrically connected to the first doped region. An isolation region is formed between the first well region and the first doped region. The isolation region is electrically connected to a second well region. The isolation region and the second well region are doped with a second dopant type The second dopant type is opposite the first dopant type. In one embodiment, the first type dopant includes a p-type dopant, and the second type dopant includes an n-type dopant. The method may further include, forming a second doped region within the first well region and below the isolation region.

Abstract: An on-board aircraft telecommunication exchange (32) provides communication and authentication services for M subscriber identity modules (SIMs) using N transceivers (36), where M can be greater than N. Associations between SIMs (56) and transceivers (36) are established when needed. Accordingly, a pool of transceivers 36 is provided to serve the collective needs of many subscribers. A SIM-based authentication process is performed (100) using a subscriber's original SIM (56). That authentication can be extended to a temporary SIM (106) that is substituted for the original SIM throughout the remainder of a flight. Alternatively, the original SIMs (56) may be locked in place and relinquished when a subscriber provides an appropriate PIN.