Patents Assigned to MP Technologies
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Patent number: 7692183Abstract: The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.Type: GrantFiled: March 7, 2008Date of Patent: April 6, 2010Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 7682865Abstract: The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.Type: GrantFiled: June 10, 2008Date of Patent: March 23, 2010Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 7638791Abstract: An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.Type: GrantFiled: March 5, 2008Date of Patent: December 29, 2009Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 7001794Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.Type: GrantFiled: October 6, 2004Date of Patent: February 21, 2006Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 6864552Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.Type: GrantFiled: January 21, 2003Date of Patent: March 8, 2005Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Publication number: 20040142504Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.Type: ApplicationFiled: January 21, 2003Publication date: July 22, 2004Applicant: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 6605485Abstract: A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.Type: GrantFiled: May 16, 2002Date of Patent: August 12, 2003Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 6577659Abstract: The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD<MBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.Type: GrantFiled: July 17, 2000Date of Patent: June 10, 2003Assignee: MP Technologies, L.L.C.Inventor: Manijeh Razeghi
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Patent number: 6570179Abstract: A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.Type: GrantFiled: April 13, 2000Date of Patent: May 27, 2003Assignee: MP Technologies, LLCInventor: Manijeh Razeghi
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Patent number: 6480520Abstract: An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.Type: GrantFiled: April 17, 2000Date of Patent: November 12, 2002Assignee: MP Technologies LLCInventor: Manijeh Razeghi
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Patent number: 6452242Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.Type: GrantFiled: March 23, 2000Date of Patent: September 17, 2002Assignee: MP Technologies LLCInventor: Manijeh Razeghi
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Patent number: 6329668Abstract: Aluminum Free InGaAs/InGaP quantum dot photoconductive detectors are grown on GaAs substrates by LP-MOCVD.Type: GrantFiled: July 27, 2000Date of Patent: December 11, 2001Assignee: MP Technologies L.L.C.Inventor: Manijah Razeghi
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Patent number: 6271104Abstract: The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.Type: GrantFiled: August 6, 1999Date of Patent: August 7, 2001Assignee: MP TechnologiesInventors: Manijeh Razeghi, Patrick Kung