Patents Assigned to MP Technologies
  • Fabrication of defect free III-nitride materials
    Patent number: 6271104
    Abstract: The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.
    Type: Grant
    Filed: August 6, 1999
    Date of Patent: August 7, 2001
    Assignee: MP Technologies
    Inventors: Manijeh Razeghi, Patrick Kung