Abstract: A method of preparing a sample for physical analysis is disclosed, which is characterized by forming a low-temperature atomic layer deposition (ALD) metal nitride film or a low-temperature atomic layer deposition (ALD) metal oxynitride film by plasma-less enhanced atomic layer deposition (PLALD) at a temperature below 40° C. on a specimen to generate a sample for physical analysis to prevent the surface of sample for physical analysis from being damaged during physical analysis.