Patents Assigned to MSSGORPS CO., LTD.
  • Patent number: 11604153
    Abstract: A method of preparing a sample for physical analysis is disclosed, which is characterized by forming a low-temperature atomic layer deposition (ALD) metal nitride film or a low-temperature atomic layer deposition (ALD) metal oxynitride film by plasma-less enhanced atomic layer deposition (PLALD) at a temperature below 40° C. on a specimen to generate a sample for physical analysis to prevent the surface of sample for physical analysis from being damaged during physical analysis.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: March 14, 2023
    Assignee: MSSGORPS CO., LTD.
    Inventors: Chi-Lun Liu, Jung-Chin Chen, Bang-Hao Huang, Yu-Han Chen