Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate. In one embodiment, the polishing head (140) includes a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate (105) during a polishing operation and a retaining ring (170) rotatably disposed about the subcarrier. The retaining ring (170) has a lower surface (205) that is substantially flush with the surface of the substrate (105) and is in contact with a polishing surface (125) during the polishing operation. The retaining ring (170) is capable of rotating relative to the substrate (105) held on the subcarrier (160) to inhibit non-planar polishing of the surface of the substrate. In another embodiment, the polishing head (140) further includes a backing ring (210) in a facing relationship with an upper surface (255) of the retaining ring (170) and separated from the retaining ring by a bearing (260).

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate, while providing a more efficient use of slurry. In one embodiment, the apparatus (100) includes a subcarrier (160) with a flexible member (185) attached to a lower surface (165) of it on which the substrate is held. The flexible member (185) has at least one hole (195) therein so that a pressurized fluid introduced between the flexible member and the subcarrier (160) directly presses the substrate (105) against a polishing surface (125) during operation. The number and size of the holes (195) are selected to provide sufficient friction between the flexible member (185) and the substrate (105) to cause it to rotate when a drive mechanism rotates the subcarrier (160).

Abstract: A wafer-polishing head which has an increased flexible membrane life and improved wafer polishing accuracy has a principal head 106 having a lower opening portion 106a with an approximately circular shape. A flexible membrane 2 which is positioned in the opening portion 106a of the principal heal head 106 for closing the opening portion 106a and for holding a wafer W at the underside of an inward peripheral portion 2a of the flexible membrane. A sealed pressurizing chamber 107 is formed by closing the opening portion 106a with the flexible membrane. A pressure regulator is provided for controlling the internal pressure of the pressurizing chamber 107. The flexible membrane 2 is thicker in an outer peripheral portion 2b thereof than in the inward peripheral portion 2a which holds the wafer.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).