Abstract: A semiconductor package is provided with a functionally necessary minimum number of components with which stress concentrated on specific solder bumps is reduced and ruptures of the bumps are prevented even when stress caused by physical bending or a difference in thermal expansion coefficient is applied to the package. The semiconductor package includes a tabular die and bonding pads arranged on a mounting surface of the die. A passivation layer and a protective film are provided on the mounting surface such that central areas of the bonding pads are open. Under-bump metals (UBMs) connected to the bonding pads are provided in the openings, and solder bumps are provided on the surfaces of the UBMs. The diameter of the UBMs provided at corners of the die is less than that of the UBM provided at the approximate center of the die so that the elastic modulus of the UBMs provided at the corners is small.

Abstract: An operation-position detector having a tube that allows an ultrasonic signal to propagate therethrough. The tube has a plurality of holes capable of being selectively closed or opened by an operation and is provided with an ultrasonic transmitter-receiver arranged at a first end thereof. A signal processor drives the ultrasonic transmitter-receiver and causes an ultrasonic signal to propagate through the inside of the tube, receives a reflection signal corresponding to a closed or open state of each of the holes, and detects the state of each hole on the basis of the reflection signal, thereby detecting the operation position of an operation conducted by an operator.

Abstract: In an antenna, a first type radiation electrode and a second type radiation electrode are provided on the surface of a dielectric base, which has a predetermined external shape, or embedded in the dielectric base. The first type radiation electrode is provided with an open terminal at one end thereof and a feeding terminal at the other end thereof so as to constitute a monopole type antenna. The second type radiation electrode is provided with a capacitive-coupling feeding electrode at one end thereof and a ground connection terminal at the other end thereof so as to constitute a capacitive feed antenna. The one end of the first type radiation electrode is located opposite to the feeding electrode of the second type radiation electrode when viewed in the direction of the length of the dielectric base.

Abstract: An electromechanical conversion element having high connection reliability and an actuator equipped with the electromechanical conversion element. The electromechanical conversion element includes: a displacement part capable of expanding and contracting by application of voltage and having electrode forming faces and an adhesion face which are disposed adjacent to each other; and external electrodes on the electrode forming faces, in which lead electrodes for applying voltage to the displacement part are bonded to bonding regions provided in the external electrodes, and a driven member capable of being driven by the expansion and contraction of the displacement part is bonded to the adhesion face by an adhesive. The electromechanical conversion element further includes bleed flow blocking parts on the electrode forming faces at points closer to the adhesion face than ends of the bonding regions located on the same side as the adhesion face.

Abstract: A piezoelectric fan includes a vibration plate one end of which in a length direction is supported in a fixed manner and the other end of which in the length direction is a free end; and piezoelectric elements, attached on at least one of front and back surfaces of the vibration plate. In an intermediate portion of the vibration plate in the length direction, a right-angle bent portion is provided, and a plurality of divided blades are defined by slits in an area of the vibration plate extending from the free end to a position located a predetermined distance from the bent portion toward the free end. The piezoelectric element is attached on the portion of the vibration plate between the fixed end and the bent portion. Hence, variations in resonant frequency among the blades are reduced and the blades are efficiently excited using a common piezoelectric element.

Abstract: In an antenna module, a main portion includes a plurality of insulating sheets made of a flexible material and laminated on each other. An antenna configured to transmit/receive a high-frequency signal is disposed in the main portion. A connection portion is disposed in the main portion and is connected to an electronic device that inputs/outputs the high-frequency signal. A signal transmission line is disposed in the main portion and has a strip line structure or a microstrip line structure to transmit the high-frequency signal. An impedance matching circuit is disposed in the main portion and between the antenna and end of a signal transmission line facing in a negative x direction. An impedance matching circuit is disposed in the main portion and between the connection portion and an end of the signal transmission line facing in a positive x direction.

Abstract: In a chip-component structure, a monolithic ceramic capacitor is a structure including a predetermined number of substantially flat internal electrodes stacked on each other. An interposer includes a substrate larger than the outer shape of the monolithic ceramic capacitor. The substrate includes a first major surface on which first front electrodes for use in mounting the monolithic ceramic capacitor are disposed and a second major surface on which first back electrodes for use in connecting to an external circuit board are disposed. The interposer includes a depression in its side surface. The depression includes a wall surface on which a connection conductor is disposed. The front surface of the substrate is overlaid with resist films extending along its edges.

Abstract: A circuit module includes a duplexer and a circuit substrate. A first signal path connects a first external electrode to a second external electrode. A second signal path connects a third external electrode to a fourth external electrode. A third signal path connects a fifth external electrode to a sixth external electrode. A first ground path connects a seventh external electrode to an eighth external electrode. A second ground path is connected to a ninth external electrode and is capacitively coupled to the second signal path.

Abstract: A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h/? of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h/? of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h/? of the dielectric layer is about 0.2 or less.

Abstract: A control IC including a full-bridge circuit is disposed on a primary side and a secondary side. Bidirectional communication is performed between the primary side and the secondary side in a state in which they are isolated. A control signal output from the primary side or the secondary side earlier is preferentially processed. As a result, the authority to control a switching element can be freely given to a primary-side control IC or a secondary-side control IC, and any control processing can be performed with software.

Abstract: An isolated switching power supply apparatus includes a direct-current input power supply, a power transmission transformer including a primary winding and a secondary winding, at least one main switching element configured to perform switching control on a direct-current voltage applied to the primary winding of the power transmission transformer, a rectification circuit that includes at least one rectification switching element and is connected to the secondary winding of the power transmission transformer, a smoothing circuit connected to the secondary winding of the power transmission transformer, a power conversion circuit configured to obtain an output voltage from the smoothing circuit, and a control circuit configured to control an operation of the power conversion circuit.

Abstract: A high-frequency switch module includes a multi-layer substrate, and a switch circuit mounted on the multi-layer substrate. The multi-layer substrate includes a terminal through which a plurality of high-frequency signals in a plurality of frequency bands are input and output, a plurality of switch terminals, terminals to which control signals to control the switch circuit are supplied, current paths that connect the terminals to the switch circuit, and resistors that are provided on the current paths and have resistance values greater than the resistance values of the current paths. The switch circuit connects the terminal to the switch terminals corresponding to the frequency bands of high-frequency signals input and output through the terminal based on the control signals.

Abstract: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Abstract: In a method for producing a multilayer ceramic substrate by a non-shrinkage process, even when a total area of surface electrodes on a first principal surface side is smaller than that on a second principal surface side, a favorable balance in terms of a time period from softening to crystallization of glass is achieved between the first principal surface side and the second principal surface side, thereby allowing all base material layers to be densified and prevented from causing cracks or warpage, even when the crystallization temperature is lowered to prevent production of a reaction layer. The crystallization temperature of a glass material included in a second base material layer defining a second principal surface with a larger total area of surface electrodes is less than that of a glass material included in a first base material layer defining a first principal surface.

Abstract: In a method for manufacturing a multilayer ceramic electronic device, a multilayer ceramic element assembly is prepared that includes laminated unsintered ceramic base material layers, a first conductor pattern, a seat portion disposed in a surface of the multilayer ceramic element assembly and arranged to mount a surface mount electronic device thereon, a second conductor pattern connected to the surface mount electronic device, and a resin introduction portion located outside a vertically projected region of the surface mount electronic device and arranged to introduce a resin to the seat portion. The multilayer ceramic element assembly is fired and the surface mount electronic device is mounted on the seat portion of the fired multilayer ceramic element assembly with the second conductor pattern therebetween. The resin is filled from the resin introduction portion into the seat portion and between the seat portion and the surface mount electronic device, and the resin is cured.

Abstract: In a monolithic ceramic electronic component, given that an interval between outer-layer dummy conductors adjacent to each other in an outer layer portion is d1, and that an interval between first and second inner electrodes adjacent to each other in an inner layer portion is d2, 1.7d2?d1 is satisfied. By reducing a density of the outer-layer dummy conductors in the outer layer portion on that condition, pressing of the inner electrodes through the outer-layer dummy conductors is relieved in a pressing step before firing. As a result, a distance between the inner electrodes can be prevented from being locally shortened. It is hence possible to effectively reduce and prevent degradation of reliability of the monolithic ceramic electronic component, e.g., a reduction of BDV.

Abstract: An unbalanced-balanced conversion circuit element includes an inductor connected in series between an unbalanced terminal and a first balanced terminal. The first balanced terminal side of the inductor is grounded via a capacitor. A capacitor is connected in series between the unbalanced terminal and a second balanced terminal. An inductor is connected between the first balanced terminal side of the inductor and the second balanced terminal side of the capacitor. In a laminate defining the unbalanced-balanced conversion circuit element, the capacitor is spaced far from a mounting surface of the laminate in comparison with other circuit elements.

Abstract: A chip-component structure includes an interposer and a multilayer capacitor mounted thereon. The interposer includes a substrate, a component connecting electrode, an external connection electrode, and a side electrode. The component connecting electrode and the external connection electrode are electrically connected by the side electrode. The component connecting electrode is joined to an external electrode of the multilayer capacitor. The substrate includes a communication hole that communicates between opposite spaces opening in both principal surfaces of the substrate.

Abstract: A high-frequency switch module includes an ESD device, a switch IC, and a SAW filter element that are mounted on the surface of a multilayer substrate. A ground-side land for the ESD device is connected to an external-connection ground electrode for the ESD device by via holes and plane electrode patterns. A ground connection land for the switch IC and a ground connection land for the SAW filter element are connected to a common inner ground electrode by via holes, and are connected to a common external-connection ground electrode by via holes and another common inner ground electrode.

Abstract: In a high-frequency module, mounting lands arranged to mount at least one filter device having at least one set of an unbalanced terminal and two balanced terminals are provided at one side of a substrate top surface, and mounting lands arranged to mount at least one element electrically connected to the filter device are arranged at the opposite side. At least two of a plurality of connection terminals provided on a substrate bottom surface are respectively connected to conductor patterns connected to via-hole conductors penetrating the substrate within a mounting area for mounting the filter device via connection lines and are arranged at a pitch which is less than the pitch of the via-hole conductors.