Abstract: A high frequency switch (1) includes a first input/output terminal (30); at least three second input/output terminals (40a to 40e); a first switch (10) including a first common terminal (11) and at least two first selection terminals (12a to 12c) selectively connected to the first common terminal (11); and a second switch (20) including a second common terminal (21) connected to the first selection terminal (12c) with a matching circuit (50) interposed therebetween and at least two second selection terminals (22a to 22c) selectively connected to the second common terminal (21), in which the first common terminal (11) is connected to the first input/output terminal (30), the first selection terminals (12a and 12b) are connected to the second input/output terminals (40a and 40b), and the second selection terminals (22a to 22c) are connected to the second input/output terminals (40c to 40e).

Abstract: A monolithic ceramic electronic component having outer electrodes that include an inorganic substance containing at least Si, a crystal phase C containing at least Si, Ti, and Ba at the interfaces to a ceramic layer in peripheral end portions of the outer electrodes. A value of the crystal phase area ratio indicating the relationship between the area of the crystal phase C and the area of a glass phase G, which are formed at the interface to the ceramic layer, in a region within 5 ?m from the peripheral end portion of the outer electrode is within a range of 75% to 98%.

Abstract: A heat treating furnace capable of continuously performing binder removal and subsequent firing without requiring a complicated configuration and increasing the equipment size and cost, for example, for degreasing a ceramic molding which is to be fired in a process for manufacturing a ceramic electronic component. A heat insulator is disposed to surround a heat treatment region in a case, and a reflector is disposed between the inner wall of the case and the insulator in order to reflect heat transferred from the heat treatment region through the heat insulator. A module heater including a heater embedded in the insulator is used. As the reflector, there is used a reflector having a structure in which a plurality of thin plates is arranged so that the main surfaces are arranged in parallel to each other with a predetermined space between the adjacent main surfaces.

Abstract: A surface acoustic wave apparatus includes a first filter and a second filter, which are integrated into one package, and, filter signal terminals of the first and second filters are connected to package signal terminals of the package through different paths which are insulated from each other. A signal line extended from filter signal terminals is connected to one common terminal outside the package. The signal line and the common terminal define a coupling section. An inductance device is connected in parallel to the coupling section as a matching circuit.