Abstract: A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure.
Abstract: A method of, and system for, assaying for selected constituents in liquid mixtures confined by corresponding containing structures having relatively small electromagnetic absorption in at least one transmission wavelength range for transmissions of electromagnetic radiation therethrough, including in vivo assaying for a presence of selected constituents in bloodstreams in circulatory system passageways in mammalian bodies having relatively small electromagnetic radiation absorption in at least one transmission wavelength range for transmissions of electromagnetic radiation between such passageways and outer surfaces of corresponding bodily skin, based on, in the bloodstream example, introducing in a bloodstream a probe comprising a binding base capable of binding to at least one of the selected constituents and of also concurrently conjugating to two different fluorophores of which one has an emission spectra peak distribution in the transmission wavelength range that overlaps an absorption spectra peak distr
Abstract: A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure.