Abstract: Systems and methods for surfacing natural language queries from one or more transcripts. An example method may include converting received audio to text, through automated speech recognition, to form a transcript of the audio, wherein the transcript includes text of the audio and identifications of speakers associated with portions of the text corresponding to utterances from the respective speakers; generating input signals based on at least the transcript; executing at least one of one or more heuristics or a trained machine-learning (ML) model, using the generated input signals as an input, to generate at least one of a suggested natural language query for searching the transcript or a key moment within the received audio; and causing at least one of the suggested natural language query or the key moment to be surfaced on one or more remote devices.

Abstract: Proposed is an electronic device for at least one of video moment retrieval and highlight detection which includes a storage unit and a processor, wherein the processor obtains a plurality of first video features from a video, obtains a text query feature from a text query, obtains a plurality of weights from the plurality of first video features and the text query feature, obtains a plurality of second video features from the plurality of weights and the plurality of first video features, obtains a plurality of third video features from the plurality of second video features by using an encoder, obtains a plurality of fourth video features from the plurality of third video features and a time query by using a decoder, and selects at least one of time points or time periods of the video by using the plurality of fourth video features.

Abstract: The following relates generally to using generative AI to: (i) classify documents; (ii) generate prompts to classify documents; (iii) evaluate the classification performance of prompts; (iv) generate updates to prompts; and/or (v) evaluate the classification performance of updated prompts.

Abstract: The following relates generally to using generative AI to: (i) classify documents; (ii) generate prompts (and/or criteria for prompts) to classify documents; (iii) explain document classifications; and/or (iv) explain updates to prompts (and/or prompt criteria). In some embodiments, one or more processors: obtain an initial set of documents from a corpus of documents; classify documents within the initial set of documents by inputting a prompt and the documents within the initial set of documents into a generative artificial intelligence (AI) model; and evaluate classification performance of the prompt to identify (i) that the initial set of documents does not include enough documents associated with a first issue of the one or more issues, or (ii) that the corpus of documents is associated with a new issue.

Abstract: Example embodiments relate to indicating results that overlap between multiple sets of search results.

Abstract: A method for automatically identifying important and urgent news (IUN) in a large set of data comprises obtaining the large set of data in a textual-format, the large set of textual-data data contain a plurality of individual texts; clustering the textual-format data into a plurality of clusters; for each cluster, calculating the distances to all other clusters in the plurality of clusters and from those calculated distances determining a radius and a median of those calculated distances and then obtaining a difference between the radius and the median; and using the difference to identify important and urgent news in the large set of data.

Abstract: Systems and methods of sensor data fusion including sensor data capture, curation, linking, fusion, inference, and validation. The systems and methods described herein reduce computational demand and processing time by curating data and calculating conditional entropy. The system is operable to fuse data from a plurality of sensor types. A computer processor optionally stores fused sensor data that the system validates above a mathematical threshold.

Abstract: A method of integrating a cryptographic digital asset into a digital software application, includes receiving a digital asset identification (ID) code, the digital asset ID code existing together with a unique owner ID code on a distributed blockchain ledger. The digital asset ID code represents the cryptographic digital asset, and the cryptographic digital asset comprises a plurality of attributes. A virtual object is then represented on the display via the digital software application. The virtual object has an appearance that is based on the plurality of attributes of the cryptographic digital asset, and the virtual object includes a plurality of object attributes. The method further includes modifying at least one of the object attributes according to an aspect of the digital software application or interaction between the character avatar and the virtual object and representing a modified virtual object on the display via the digital software application.

Abstract: Provided is a method for securing a biometric recognition of a user to be recognized against one or more templates and a non zero integer, corresponding to registered users identities, using a biometric sample of said user, in a biometric recognition system comprising a plurality of computation devices, a global scoring computation device and a recognition device. Each of said templates is split, using an additive splitting modulo a predetermined integer N, into a plurality of template shares stored in said computation devices, with i in [0, n-1] and n a non zero integer. A global scoring is computed for said at least one template by combining said shares of the global scoring computed for said template by said plurality of computation devices according to a formula. Other embodiments disclosed.

Abstract: According to an embodiment of the present disclosure, An antenna structure disposed around a side perimeter of a discharging tube providing a space in which a plasma is generated may be provided. The antenna structure comprises n unit antennas, each of n unit antennas comprises: a first arc section, having a first radius of curvature, a second arc section, having a second radius of curvature, and an arc connecting section connecting the first arc section and the second arc section, and m-th unit antenna and (m+1)-th unit antenna adjacent to each other are disposed so that an angle formed by an arc connecting section of the m-th unit antenna and an arc connecting section of the (m+1)-th unit antenna in basis of the center of the discharging tube is 360/n degree.

Abstract: A method of generating a voltage pulse includes generating a first non-sinusoidal continuous wave voltage (NSCWV) waveform for a first time duration of a clock cycle. The first NSCWV signal comprises a first base voltage and a first frequency. The method further includes performing a first transition to change from the first NSCWV signal to a second NSCWV signal. The second NSCWV signal is generated for a second time duration of the clock cycle. The second NSCWV signal comprises a second base voltage and a second frequency. The method further includes performing a second transition to change from the second NSCWV signal back to the first NSCWV signal. The first transition and the second transition are repeated over the clock cycle.

Abstract: Embodiments of the invention includes various power supplies for plasma systems. These power supplies, for example, closes a switch to connect and disconnect a current pathway to cause an application of an asymmetric periodic voltage waveform. Where each cycle of the asymmetric periodic voltage waveform includes a first portion that begins with a first negative voltage and changes to a positive peak voltage, a second portion that changes from the positive peak voltage to a third voltage level and a fourth portion that includes a negative voltage ramp from the third voltage level to a fourth voltage level.

Abstract: A film forming apparatus configured to form a metal oxide film or a metal nitride film through atomic layer deposition by alternately introducing metal compound gas and an OH radical or an NH radical in a reaction container. The film forming apparatus including: the reaction container; and at least one plasma generator provided outside the reaction container and configured to generate a first plasma including an oxygen radical or a nitrogen radical when oxygen or nitrogen is supplied and generate a second plasma including a hydrogen radical when hydrogen is supplied. The OH radical is generated by collision between the oxygen radical and the hydrogen radical or the NH radical is generated by collision between the nitrogen radical and the hydrogen radical in a downstream region from an outlet of the at least one plasma generator to an inner space of the reaction container.

Abstract: Embodiments disclosed herein comprise an apparatus for sensing plasma conditions in a chamber. In an embodiment, the apparatus comprises a housing with a plasma sensor on a surface of the housing. In an embodiment, the apparatus further comprises a computing system within the housing and electrically coupled to the plasma sensor. In an embodiment, the computing system comprises a battery, a board, a processing unit on the board, and a memory coupled to the processing unit. In an embodiment, a wireless communication module may be coupled to the processing unit.

Abstract: A method for repairing copper and low-k dielectric films on a substrate is provided. In some embodiments, the method includes positioning the substrate within a process chamber, introducing a reducing agent into the process chamber to remove copper oxide from a copper layer on the substrate, removing the reducing agent from the process chamber, and introducing a recovery precursor into the process chamber to decrease a k value of a low-k film on the substrate.

Abstract: Exemplary semiconductor processing methods may include providing a first etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include providing a passivation precursor to the processing region. The methods may include contacting the substrate with the first etchant precursor and the passivation precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The contacting may form a passivation material on the substrate.

Abstract: A pattern formation method includes: forming a first inversion layer on a projecting and recessed pattern of a curable composition; forming a flattened inversion layer as a second inversion layer on the first inversion layer; performing first etching of etching an upper layer portion of an inversion layer including the first inversion layer and the flattened inversion layer to expose a top surface of a projecting portion of the projecting and recessed pattern; and performing second etching of etching the exposed pattern of the curable composition using the inversion layer remaining in a recessed portion of the projecting and recessed pattern as a mask, and in the first etching, the first inversion layer and the flattened inversion layer are etched using mixed gas obtained by a plurality of kinds of etching gas.

Abstract: An apparatus for processing a substrate, suitable for use during semiconductor manufacturing is provided. The apparatus includes a chamber body, and a substrate support disposed within the chamber body. A plurality of upper lamps are disposed above the substrate support, and a plurality of lower lamps are disposed below the substrate support. One or more spot heaters are disposed above the substrate support, and are configured to direct a radiation beam towards the substrate support. The apparatus further includes a controller configured to control the one or more spot heaters. The controller is programmed to determine an angular position of the substrate and adjust a power output of one or more spot heaters using a set of temperature correction factors, such that the power output of the one or more spot heaters varies as the one or more spot heaters heat a plurality of angular portions of the substrate.

Abstract: A processing device for processing a workpiece includes: a holding table that holds the workpiece; a processing unit that performs processing on the workpiece held on the holding table; an abnormality detection unit that detects an abnormality of the workpiece; and a control unit that controls at least the processing unit and the abnormality detection unit. The control unit includes: a registration unit that registers first reference information serving as a reference for determining that the workpiece before processing is normal; and a comparison unit that compares the first reference information registered in the registration unit with first detection information obtained by detecting the workpiece by the abnormality detection unit before the workpiece is processed by the processing unit.

Abstract: Methods for forming improved isolation features in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes etching a first trench in a substrate; depositing a first insulation layer in the first trench with a first flowable chemical vapor deposition process; depositing a second insulation layer on the first insulation layer with a second flowable chemical vapor deposition process, the second flowable chemical vapor deposition process having process parameters different from the first flowable chemical vapor deposition process, and a portion of the first trench remaining unfilled by the first insulation layer and the second insulation layer; and forming an insulating fin in the portion of the first trench unfilled by the first insulation layer and the second insulation layer.