Patents Assigned to NAGOYA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
  • METHOD OF FORMING SEMICONDUCTOR THIN FILM
    Publication number: 20150371850
    Abstract: Provided is a method of forming a semiconductor thin film. The method may include forming, on a substrate, a thin film that contains one of Ge, Si, and a SiGe mixture, and Sn in a content of 0.1 atomic % or more to 20 atomic % or less, and applying pulsed laser light to the thin film.
    Type: Application
    Filed: August 28, 2015
    Publication date: December 24, 2015
    Applicants: NAGOYA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, GIGAPHOTON INC., KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Masashi KUROSAWA, Noriyuki TAOKA, Osamu NAKATSUKA, Shigeaki ZAIMA, Hiroshi IKENOUE