Patents Assigned to Nahyang Technological University of Singapore
  • Simplified dual damascene process utilizing PPMSO as an insulator layer
    Patent number: 6323125
    Abstract: Only one photo mask defines the metal trench and via region. The mask blocks the UV light in the trench and via area forming Plasma Polymerized Methylsilane Oxide (PPMSO) in the exposed areas. Two step RIE plasma treatment using chlorine gas and oxygen gas removes the Plasma Polymerized Methylsilane (PPMS) in the trench and via regions. Conductive metal is deposited. A CMP process polishes back both excess metal along with the PPMSO, at a similar rate, to form: conducting metal lines, interconnects, and via contacts without metal dishing.
    Type: Grant
    Filed: March 29, 1999
    Date of Patent: November 27, 2001
    Assignees: Chartered Semiconductor Manufacturing Ltd, National University of Singapore, Nahyang Technological University of Singapore
    Inventors: Choi Pheng Soo, Wye Boon Loh, Lap Chan