Abstract: This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSeXS(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S, the second shell covering the first shell being one of Cd(Z)Zn(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSeXS(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.

Abstract: The present disclosure provides a yellow-red spectral quantum dot, a synthesis method therefor and application thereof. The yellow-red spectral quantum dot has an alloyed structure of CdSe@CdZnSe/CdZnS or an alloyed structure of CdSe@CdZnSe/CdZnS/ZnS, the ZnS shell being one or more monolayers, and the fluorescence emission peak wavelength of the yellow-red spectral quantum dot being between 580 nm and 640 nm.

Abstract: The present disclosure provides a liquid guiding component and a using method and application thereof. The liquid guiding component includes a plurality of liquid guiding grooves, each of which includes at least one inlet end, at least one outlet end, and a groove wall connecting the inlet end and the outlet end, the liquid guiding component includes a first side and a second side arranged opposite to each other, each of said inlet ends is arranged as liquid inlet on the first side and each of the outlet ends is arranged as the liquid outlet on the second side, and the liquid guiding grooves are used to transport liquid from the inlet ends to the outlet ends. The liquid guiding component can be used to precisely control the movement direction of the ejected ink.

Abstract: Disclosed in the present disclosure are a quantum dot dispersed resin molded body, a quantum dot dispersed colloid, and a light emitting device. The quantum dot dispersed resin molded body includes quantum dots dispersed in an acrylate polymer, at least a portion of repeating units of the acrylate polymer comprise a C?C double bond, and the degree of polymerization n of the repeating units is greater than or equal to 2, the quantum dot dispersed resin molded body is formed by cross-linking and curing the quantum dot dispersed colloid.

Abstract: Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

Abstract: The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.

Abstract: The present application relates to an ink formulation, and preparation methods of functional layer of optoelectronic devices. The ink formulation includes a component A and a component B, the component A including a first liquid, the component B including a second liquid and a functional material dispersed in the second liquid, the first liquid having a boiling point at least 10° C. higher than a boiling point of the second liquid; the first liquid and the second liquid are immiscible and the solubility of the functional material in the second liquid is ?1 g, the solubility of the functional material in the first liquid is ?0.05 g, the density of the first liquid is greater than the density of the second liquid, and the ratio of the surface tension of the first liquid to the surface tension of the second liquid ranges from 0.8 to 1.2.

Abstract: This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

Abstract: The disclosure provides a quantum dot composition, a quantum dot luminescent material, a preparation method thereof and a light-emitting device containing the same. The quantum dot composition includes a microemulsion, a polymer precursor dispersing the microemulsion, wherein the microemulsion includes quantum dots, a dissolution medium dissolving the quantum dots, and an emulsifier encapsulating the dissolution medium.

Abstract: The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.

Abstract: A manufacturing method for a light emitting device, a light emitting device, and a hybrid light emitting device, the manufacturing method comprises the following steps: step S1: disposing a mask plate having a plurality of hollow portions on a substrate; step S2: applying, by using a solution method, ink on a surface of the substrate by using the hollow portions; and step S3: drying or solidifying the ink on the surface of the substrate to form a light emitting layer or a functional layer.

Abstract: Embodiments disclosed herein relate to a light emitting device, comprising a first substrate, a pixel isolation structure, electroluminescent structures, and a second substrate, the first substrate and the second substrate are oppositely disposed, and the second substrate is disposed on one side of pixel isolation structure far away from the first substrate, the pixel isolation structure is disposed on the surface of one side of first substrate, the pixel isolation structure forms a plurality of mutually isolated sub-pixel regions on the surface of first substrate, electroluminescent structures are disposed on a portion of first substrate corresponding to each sub-pixel region, the sub-pixel regions further comprise: a quantum dot layer disposed in at least one sub-pixel region, wherein quantum dot layer in each sub-pixel region is located on one side of electroluminescent structures far away from first substrate or located between electroluminescent structure and first substrate.

Abstract: A coating method, a coating device and a light-emitting device, the coating method comprises: controlling an ink supply device to stop supplying ink to a micro nozzle when it is determined that the lowest end of an ink droplet from the micro nozzle reaches a first position; determining that the distance between the end of the micro nozzle and a substrate reaches a second distance, the second distance being preset; controlling the ink supply device to continue to supply ink, and controlling the micro nozzle to move relative to the substrate for a pattern coating. The disclosure provides a good pattern forming solution, thereby avoiding the technical problem in the prior art of inkjet printing apparatuses easily causing nozzle clogging.

Abstract: The present invention relates to low reabsorbing semiconductor nanocrystals having, simultaneously, an emission center core surrounded by at least one absorbing shell capable of absorbing blue or purple light and a protective exterior shell. The emission center core is capable of emitting at least one different wavelength range of light. The low reabsorbing semiconductor nanocrystals demonstrate an absorbance ratio greater than or equal to 10. These low reabsorbing semiconductor nanocrystals can be used in optical applications, some of which can include, for example, light-emitting diodes, solid-state-lighting, solar cells, lasers, and biomedical tags.

Abstract: The present invention relates to a light-emitting device including a light source, a first light-emitting material spaced apart from the light source, and at least one additional light-emitting material. The first light-emitting material includes low reabsorbing semiconductor nanocrystals having an emission-center core, an exterior protective shell, and at least one inner light-absorbing shell. The device is useful for efficiently producing white light having a high color rendering index.