Patents Assigned to NaMLab GmbH
  • Publication number: 20120286144
    Abstract: A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.
    Type: Application
    Filed: November 10, 2011
    Publication date: November 15, 2012
    Applicant: NaMLab GmbH
    Inventors: Juergen Holz, Andre Wachowiak, Stefan Slesazeck