Abstract: A manufacturing method for a photonic device includes dividing a target photonic network, which is a photonic network configured for the photonic semiconductor device, into a plurality of sub-photonic networks, forming the plurality of sub-photonic networks on a plurality of photonic chips, and connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the target photonic network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip. Compared with the scale of the photonic network of the existing photonic semiconductor device, which is limited due to the footprint limitation of a single chip, the scale of the photonic network of the photonic semiconductor device is increased several times.

Abstract: Embodiments of the present invention provide an optical structure, an optical coupling method, and a photonic integrated circuit chip. The optical structure includes: two optical coupling structures with different structures, that is, a first optical coupling structure and a second optical coupling structure. The first optical coupling structure includes a first optical transmission structure, and a first coupling port and a second coupling port both connected to the first optical transmission structure. The second optical coupling structure includes a second optical transmission structure, and a third coupling port and a photoelectric conversion structure both connected to the second optical transmission structure. When optical signals are provided in different methods or optical coupling is performed in different scenarios, optical signal coupling can be realized by using optical coupling structures of different structures in the abovementioned optical structure.