Abstract: The present disclosure relates to a vertical deep-ultraviolet light-emitting diode and a method for manufacturing the same. The vertical deep-ultraviolet light-emitting diode includes: a conductive substrate, wherein the conductive substrate includes a first surface and a second surface opposite to the first surface; an epitaxial layer, disposed on the first surface of the conductive substrate, and comprising a P-type GaN layer, an electron blocking layer, a quantum well layer and an N-type AlGaN layer that are successively laminated along a direction from the second surface to the first surface, wherein the epitaxial layer has a thickness less than 1 ?m; an N-type electrode, disposed on a surface, facing away from the conductive substrate, of the epitaxial layer; and a P-type electrode, disposed on the second surface.