Abstract: A static magnetic memory includes a layer having a plurality of vertically oriented and shape-anisotropic elongated ferromagnetic particles. A plurality of writing conductors are adjacent the layer, and the conductors selectively apply magnetic fields to selected regions of the layer by directing electrical current to magnetize the particles in an up or down direction. Static reading means detect the direction of magnetization. The particles may include a soft magnet portion and a hard magnet portion. In another preferred embodiment, a material and a method of making same includes providing a matrix full of elongated holes, depositing a first magnetic material having a first coercivity into the holes, and then depositing a second magnetic material having a second coercivity into the holes to form a composite elongated particle in each hole.
Type:
Grant
Filed:
August 8, 1995
Date of Patent:
April 21, 1998
Assignee:
Nano Systems, Inc.
Inventors:
Charles P. Beetz, Jr., John Steinbeck, Robert W. Boerstler, David R. Winn