Abstract: A micro-mechanical component including a support element and a cantilever with integrated electrical functional element to which at least two electrical supply lines implemented as printed conductors on the cantilever are routed. The invention proposes to arrange at least one each of the supply lines on the two opposite flat surfaces of the cantilever and/or the support element. The functional element is supplied by the first supply line on a first flat surface, with the second supply line on the opposite flat surface serving as return line.

Abstract: A micro-mechanical component including a support element and a cantilever with integrated electrical functional element to which at least two electrical supply lines implemented as printed conductors on the cantilever are routed. The invention proposes to arrange at least one each of the supply lines on the two opposite flat surfaces of the cantilever and/or the support element. The functional element is supplied by the first supply line on a first flat surface, with the second supply line on the opposite flat surface serving as return line.

Abstract: A method of manufacturing an SPM probe having a support element, a cantilever, and a scanning tip on an underside of the cantilever, and having a mark located on the top side of the cantilever opposite the scanning tip. The mark on the top side of the cantilever is located exactly opposite the scanning tip on the underside of the cantilever. This makes it possible to identify the exact position of the scanning tip in the scanning probe microscope from the upward-pointing top side of the cantilever, which significantly simplifies the alignment of the SPM probe. The support element with the cantilever may be prefabricated conventionally and the scanning tip and the mark are then produced on the cantilever in a self-aligning way by means of a particle-beam-induced material deposition based on a gas-induced process.

Abstract: An SPM probe with an elongated support element and a cantilever projecting beyond the front face of the support element and carrying a scanning tip, with the cantilever arranged at a front face side of the support element of the probe, protruding there from a front face side flank, and with the support element having an essentially trapezoidal cross-section with a longer and a shorter transverse edge at the face side flank, and also with critical corners at one of the transverse edges of the face side flank that are closest to a sample during the scanning process, wherein the support element has an elongated raised portion extending in the longitudinal direction of the support element and of the cantilever, with the raised portion having an essentially trapezoidal cross-section, and with the cantilever arranged on the face side on a narrow transverse edge of the raised portion of the support element, and with the raised portion with the cantilever arranged preferably at the longer transverse edge of the face

Abstract: A method of manufacturing an SPM probe having a support element, a cantilever, and a scanning tip on an underside of the cantilever, and having a mark located on the top side of the cantilever opposite the scanning tip. The mark on the top side of the cantilever is located exactly opposite the scanning tip on the underside of the cantilever. This makes it possible to identify the exact position of the scanning tip in the scanning probe microscope from the upward-pointing top side of the cantilever, which significantly simplifies the alignment of the SPM probe. The support element with the cantilever may be prefabricated conventionally and the scanning tip and the mark are then produced on the cantilever in a self-aligning way by means of a particle-beam-induced material deposition based on a gas-induced process.

Abstract: An SPM sensor (1) for a scanning probe microscope with a cantilever (3), a holding element (2) at one end of the cantilever (3) and a sensor tip (4) at the other end of the cantilever (3) and to a method for producing sensors of this type. The electron beam induced deposition (EBID or, shorter, EBD) structure (5) is anchored directly in the substrate of the sensor tip (4). The anchoring of the EBD structure (5) takes place with positive and nonpositive engagement in a hole (6) in the sensor tip (4), which is created by material removal in the substrate of the sensor tip (4). The method comprises the creation of the EBD structure by particle beam induced material deposition in the hole of the sensor tip.

Abstract: Process for producing an SPM sensor having a holding element, a cantilever and a sensor tip which projects out of the surface of the cantilever and is delimited by three surfaces. According to the process, the starting material used is a (100)-silicon wafer. The main patterning process steps are carried out on the wafer back surface, so that an SPM sensor can be produced at low cost in a single batch run.

Abstract: SPM sensor comprising a holding element, cantilever and a sensor tip, which projects out of the surface of the cantilever, at the free end of the cantilever, at least the cantilever and the three-surface sensor tip consisting of monocrystalline (100)-silicon, and a process for producing this sensor. The process is distinguished by inexpensive process steps, substantially wet-chemical etching steps. The result is that an SPM sensor with a rectangular cantilever arm having a tip which may or may not project beyond the free end is produced from a single piece.

Abstract: A micro device comprising a SU-8 photoresist layer adhered to a thin layer of, for example, silicon nitride, silicon oxide, metal, and diamond. The SU-8 layer is clamped on the thin layer by using an under-etching technique.

Abstract: Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.