Abstract: A numerical information generating apparatus receives information of a programmable logic integrated circuit that includes a plurality of crossbar switches each including resistance change elements, calculates, for each of the plurality of crossbar switches, a base delay that is a delay in which influence of a load capacitance of other crossbar switch is excluded and a correction delay that is a delay caused by influence of a fanout of other crossbar switch, and further calculates a delay of each of the plurality of crossbar switches based on the base delay and the correction delay corresponding to each of the plurality of crossbar switches.

Abstract: In order to eliminate an increase in the source potential of a transistor selected during writing or reading, this semiconductor device is equipped with: a variable-resistance type first switch having a first terminal and a second terminal; a variable-resistance type second switch having a third terminal and a fourth terminal, the third terminal being connected to the second terminal to form an intermediate node; first wiring connected to the first terminal; second wiring connected to the fourth terminal and, in a planar view, extending in a direction crossing the first wiring; a first selection transistor connected to the first wiring; a second selection transistor connected to the second wiring; a first well terminal connection line to which a well terminal of the first selection transistor is connected; and a second well terminal connection line to which a well terminal of the second selection transistor is connected.

Abstract: A logic integrated circuit includes a switch cell array. The switch cell array includes: a plurality of first wirings extending in a first direction; a plurality of second wirings extending in a second direction; a switch cell including a unit element including two serially connected resistance-changing elements, and a cell transistor to be connected to a shared terminal of the two resistance-changing elements; and a bit line to which the shared terminal is connected via the cell transistor. Two of the switch cells adjacent to each other in the first direction are each connected to the different first wiring and second wiring, and share the bit line, and a diffusion layer to which the bit line is connected.

Abstract: This switch element includes a resistance change element, a first transistor, and a second transistor. The resistance change element includes: a metal deposition type resistance change film; a first electrode; and a second electrode. To the second electrode, a source or a drain of the second transistor is connected. The switch element has a first mode and a second mode, when a potential of the second electrode is made higher than that of the first electrode and the resistance change element is switched from the low resistance state to the high resistance state. The gate voltage is greater in the first mode than in the second mode, and a potential difference between the first and second electrodes is smaller in the first mode than in the second mode.