Abstract: A method for strengthening semiconductor manufacturing tools is provided. The method includes providing a mold insert, forming a native oxide layer, attaching a release agent film, and forming a glass bonded SiOx release agent layer. With the method, a firm glass bonded SiOx release agent layer is formed uniformly on the surface of the mold insert to make the mold insert of semiconductor manufacturing tools much more resistant to abrasion and durable, extend the service life of the mold insert, cut production costs of semiconductor manufacturing, enable easy release of the mold insert, and speed up semiconductor manufacturing. Furthermore, the uniformity of the glass bonded SiOx release agent layer on the surface of the mold insert helps promote the yield when making sub-molds by the mold insert.

Abstract: The present invention discloses a method for production of selective growth masks using underfill dispensing and sintering. The method includes steps of: providing a sapphire substrate, growing a gallium nitride base layer on the sapphire substrate, coating a photoresist layer, performing imprint lithography, exposure and development, performing underfill dispensing, and performing sintering. The production method of the present invention can be applied in the atmosphere, and vacuum chambers as known production approaches are unnecessary. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the gallium nitride base layer, and each nanowire is parallel to one another.

Abstract: The present invention discloses a method for production of selective growth masks using underfill dispensing and sintering. The method includes steps of: providing a sapphire substrate, growing a gallium nitride base layer on the sapphire substrate, coating a photoresist layer, performing imprint lithography, exposure and development, performing underfill dispensing, and performing sintering. The production method of the present invention can be applied in the atmosphere, and vacuum chambers as known production approaches are unnecessary. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the gallium nitride base layer, and each nanowire is parallel to one another.

Abstract: The present invention discloses a method for production of selective growth masks using imprint lithography. The method includes steps of: providing a sapphire substrate, forming a GaN layer, an insulation layer, and a photo-resistive layer, performing imprint lithography, performing exposure and development, performing dry etching, and removing the remained photo-resistive layer. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the GaN layer, and each nanowire is parallel to one another.

Abstract: A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.

Abstract: A fabricating method of a semiconductor substrate is provided. A patterned mask layer is formed on a substrate base. The patterned mask layer includes a plurality of apertures, and each aperture exposes a portion of the substrate base. A plurality of nano-pillars is formed on the substrate base, wherein each nano-pillar is grown on the portion of the substrate base exposed by each aperture. An insulating layer is formed on a sidewall of each nano-pillar. An epitaxial lateral overgrowth process is performed on a top portion of each nano-pillar, so as to form a semiconductor layer on the nano-pillars, wherein the semiconductor layer is exposed by a plurality of gaps disposed between the nano-pillars.

Abstract: A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.