Patents Assigned to Nanocrystal Corporation
  • Ultra-Low Dislocation Density Group III - Nitride Semiconductor Substrates Grown Via Nano- Or Micro-Particle Film
    Publication number: 20100320506
    Abstract: A high quality Group III-Nitride semiconductor crystal with ultra-low dislocation density is grown epitaxially on a substrate via a particle film with multiple vertically-arranged layers of spheres with innumerable micro- and/or nano-voids formed among the spheres. The spheres can be composed of a variety of materials, and in particular silica or silicon dioxide (SiO2).
    Type: Application
    Filed: November 25, 2008
    Publication date: December 23, 2010
    Applicant: Nanocrystal Corporation
    Inventors: Petros M. Varangis, Lei Zhang