Abstract: A filter for filtering macro-particles from a plasma beam, having a bended duct for carriage of the plasma beam, the bended duct comprising an intermediate portion connected at one end to an inlet portion having a longitudinal axis disposed on an inlet plane and at another opposite end to an outlet portion having a longitudinal axis disposed on an outlet plane. The inlet portion allows the plasma beam containing macro-particles to travel toward the intermediate portion in an incident direction and the outlet portion allows the plasma beam to travel from the intermediate portion in an emergent direction. The intermediate portion is configured to deviate the incident direction to the emergent direction at an angle of more than 90° and thereby remove macro-particles from the plasma beam as it passes through the intermediate portion. The inlet plane and outlet plane are disposed at an offset angle from each other.

Abstract: A process of depositing a coating on a substrate, the method comprising the steps of: (a) depositing material on a substrate by performing a cathodic Vacuum arc (CVA) deposition step; and (b) depositing material on a substrate by performing at least one of a chemical vapour deposition (CVD) step and a physical Vapour deposition (PVD) step that excludes CVA deposition, Wherein the thickness of the material deposited in step (b) is greater than the thickness of the material deposited in step (a).

Abstract: The present invention is directed to a process for producing an image on a substrate and a substrate having an image deposited thereon using the aforementioned processes.

Abstract: A method of depositing a coating on a substrate, the method comprising the steps of: (a) depositing material on a substrate by performing a cathodic vacuum arc (CVA) deposition step; and (b) depositing material on a substrate by performing a physical vapor deposition (PVD) step that excludes CVA deposition wherein the thickness of the material deposited in step (a) is greater than the thickness of material deposited in step (b).

Abstract: An arc deposition apparatus comprises an evacuatable chamber and means for positioning at least two targets in the chamber, wherein a first one of the at least two targets is positionable in an operative position and another of the at least two targets is positionable in a standby position. An electrical power supply is provided for supplying electrical power to the target held in the operative position to form an arc on an emission surface of the operative target. Means are provided for preparing an emission surface of the target positioned in the standby position to have a predetermined morphology. Alternatively, or in conjunction with the surface preparing means, means are provided for inspecting whether the emission surface of the target positioned in the standby position has a predetermined morphology. Preferably, the positioning means is configured to interchange the at least two targets at a predetermined time.

Abstract: A cutting tool comprising a body, a cutting edge on at least one part of said body and a plasma deposited carbon coating layer provided on said cutting edge that is substantially free of macro-particles.

Abstract: A method of forming a metal coating comprising the steps of: (a) generating an arc at a metal target to create metal ions in a chamber that is under vacuum or has an inert atmosphere; (b) depositing the metal ions on a substrate to form a metal layer thereon; and (c) controlling an amount of gas in the chamber to form a primary metal-gas compound layer on said metal layer and a secondary metal-gas compound layer on said primary metal-gas compound layer, wherein said primary and secondary metal-gas compound layers have different gas atom contents.

Abstract: A method and apparatus for providing a substrate coating having a predetermined resistivity is described. The method comprises the steps of providing a substrate to be coated in a vacuum chamber, creating a plasma in the chamber, and depositing ions of the plasma on the substrate to form a ta-C substrate coating. The coating “step is stopped when the ta-C substrate coating has the predetermined resistivity. The predetermined resistivity is 105-1010 ?cm, and preferably about 106 ?cm. The substrate may be biased during the method to aid in arriving at the predetermined resistivity. The coating may be employed to reduce the risk of, or prevent electrostatic discharge to or from the substrate, or to provide a seed layer to improve adhesion between the substrate a further coating. Also described are coatings having predetermined resistivities.

Abstract: Methods and apparatus for removing material from a substrate, such as an IC component, are disclosed. The methods include creating a plasma in an evacuatable chamber, by providing a power source to an electrode in the chamber, and contacting the substrate surface with at least one of ions, atoms and free radicals of the plasma. The power source, preferably DC, is supplied to the electrode as a variable, and preferably a pulsed voltage to prevent arcing.

Abstract: A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.

Abstract: A plasma processing device include a plasma generation unit for generating plasma by using a cathodic arc discharge, first and second magnetic field ducts arranged in a row for transporting the plasma with one end of the row being connected to the plasma generation unit and a processing chamber connected to the other end of the row unit and having a stage for holding a substrate to be processed. A shutter is provided for covering the plasma during a period of a predetermined time after start of arc discharge or during a period of predetermined time before end of arc discharge. The shutter is disposed between the first magnetic field duct and the substrate to be processed, and is movable. The shutter is capable of being supplied with a voltage, and is kept in a state so as to be electrically insulated from the processing chamber.

Abstract: A method for forming a conductive region on a first portion of a substrate, the method comprising exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio vias and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions.

Abstract: In the plasma processing device which utilizes a low pressure arc discharge, a method for efficiently capturing and removing electrically charged particles and neutral particles having no charge which are at most 5 &mgr;m in particle diameter is demanded. The electrically charged particles can be captured efficiently by installing an electric field filter in a transportation course of plasma. The electric field filter has a cylindrical structure which is uneven in inner wall shape. A voltage in the range of 10 to 90 V is applied to the electric field filter. The neutral filters can be captured efficiently by installing a neutral filter having an opening sectional area which is at most 40% of a sectional area of the transportation course.