Abstract: A thin film semiconductor-on-insulator FET and a method of its fabrication are presented. The FET comprises a substantially vertically extending semiconductor channel formed between two, parallel, horizontally extending source and drain electrodes. A lower one of the source and drain electrodes is formed in a groove made in the surface of an insulator substrate. The semiconductor channel is defined by a super structure of semiconductor layers located within a periphery region of a conical-shaped structure which is surrounded by an insulator layer located above the lower electrode, the tip of the conical-shaped structure being in contact with this electrode. A gate electrode on gate oxide is located within a central region of the conical-shaped structure. The other upper one of the source and drain electrodes is associated with the base of the conical-shaped structure extending in a plane parallel to the lower electrode.

Abstract: A thin film semiconductor-on-insulator FET and a method of its fabrication are presented. The FET comprises a substantially vertically extending semiconductor channel formed between two, parallel, horizontally extending source and drain electrodes. A lower one of the source and drain electrodes is formed in a groove made in the surface of an insulator substrate. The semiconductor channel is defined by a super structure of semiconductor layers located within a periphery region of a conical-shaped structure which is surrounded by an insulator layer located above the lower electrode, the tip of the conical-shaped structure being in contact with this electrode. A gate electrode on gate oxide is located within a central region of the conical-shaped structure. The other upper one of the source and drain electrodes is associated with the base of the conical-shaped structure extending in a plane parallel to the lower electrode.