Abstract: Photodetectors are fabricated on GaAs substrate using dilute nitride technology for high speed-high-sensitivity operation for telecom and datacom applications for the wavelength ranges covering O-band (Original band: 1260 nm to 1360) to C-band (conventional band: 1530-1565 nm).
Type:
Application
Filed:
November 4, 2022
Publication date:
May 11, 2023
Applicant:
NanoGrass Solar LLC
Inventors:
Bahram Nabet, Pouya Dianat, Michel Francois, Fabio Quaranta, Adriano Cola
Abstract: A device includes a generally planar substrate and a plurality of light absorbing elements extending outwardly from the substrate. Each of the light absorbing elements includes a doped outer shell, an inner core disposed inside the outer shell and a two-dimensional electron gas sheet extending and confined between the outer shell and the inner core, with a concentric cylinder of two-dimensional electron or hole gas produced in the junction between the outer shell and the inner core.