Abstract: An image generation device includes a first color signal generation unit that generates three or more types of first color signals Rl, Gl, and Bl by combining two or more types of near-infrared light signals SIR1 and SIR2 with three or more types of visible light signals SR, SG, and SB in arbitrary proportions. The visible light signals SR, SG, and SB are outputted from a solid-state imaging element, and the near-infrared light signals SIR1 and SIR2 are acquired simultaneously with the visible light signals SR, SG, and SB. The near-infrared light signals SIR1 and SIR2 are a signal based on near-infrared light and a signal based on near-infrared light. The first color signal generation unit 1 changes combining proportions of the visible light signals SR, SG, and SB and the near-infrared light signals SIR1 and SIR2 according to quality and/or strengths of each light signal.

Abstract: A solid-state image capture device and an image capture system capable of photographing a color image with high sensitivity in a wide illuminance environment from normal illuminance to darkness. A solid-state image capture device is provided with a first detection portion in which a first visible light pixel receiving first visible light and a first near-infrared pixel receiving first near-infrared light are provided adjacent to each other, a second detection portion in which a second visible light pixel receiving second visible light different in wavelength from the first visible light and a second near-infrared pixel receiving second near-infrared light are provided adjacent to each other, and a third detection portion in which a third visible light pixel receiving third visible light different in wavelength from the first visible light and the second visible light and a third near-infrared pixel receiving third near-infrared light are provided adjacent to each other.

Abstract: A solid-state imaging element comprising a visible light detection area including a first visible light pixel for receiving first visible light, a second visible light pixel for receiving second visible light having a wavelength different from a wavelength of the first visible light, and a third visible light pixel for receiving third visible light having a wavelength different from the wavelengths of the first visible light and the second visible light; and a near infrared light detection area including a first near infrared pixel for receiving first near infrared light, a second near infrared light pixel for receiving second near infrared light having a wavelength different from a wavelength of the first near infrared light, and a third near infrared light pixel for receiving third near infrared light having a wavelength different from the wavelengths of the first near infrared light and the second near infrared light.

Abstract: A solid-state imaging element comprising a visible light detection area including a first visible light pixel for receiving first visible light, a second visible light pixel for receiving second visible light having a wavelength different from a wavelength of the first visible light, and a third visible light pixel for receiving third visible light having a wavelength different from the wavelengths of the first visible light and the second visible light; and a near infrared light detection area including a first near infrared pixel for receiving first near infrared light, a second near infrared light pixel for receiving second near infrared light having a wavelength different from a wavelength of the first near infrared light, and a third near infrared light pixel for receiving third near infrared light having a wavelength different from the wavelengths of the first near infrared light and the second near infrared light.