Abstract: The invention relates to a semiconductor laser having at least one semiconductor substrate (10), at least one active layer (20) arranged on the semiconductor substrate (10) which generates radiation in a wavelength region, at least one laser mirror (40) which is applied at one end of the active layer (20) perpendicular thereto, through which a part of the radiation generated in the active layer (20) emerges, and which is provided with a layer of absorbing material (50, 60) said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror (40).

Abstract: The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ?1 ?m that is arranged below and/or above the active layer.