Patents Assigned to Nanosolar, Inc.
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Patent number: 7253017Abstract: Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.Type: GrantFiled: November 22, 2002Date of Patent: August 7, 2007Assignee: Nanosolar, Inc.Inventors: Martin R. Roscheisen, Brian M. Sager, Jacqueline Fidanza, Klaus Petritsch, Gregory A. Miller, Dong Yu
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Publication number: 20070169813Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.Type: ApplicationFiled: February 23, 2006Publication date: July 26, 2007Applicant: Nanosolar, Inc.Inventors: Matthew Robinson, Jeroen Van Duren, Craig Leidholm
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Publication number: 20070169810Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.Type: ApplicationFiled: February 23, 2006Publication date: July 26, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Publication number: 20070169811Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method includes forming a first layer of a first precursor material over a surface of a substrate, wherein the precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles. The method may include forming at least a second layer of a second precursor material over the first layer, wherein the second precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles and wherein the second precursor material has a chalcogen content greater than that of the first material.Type: ApplicationFiled: February 23, 2006Publication date: July 26, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Martin Roscheisen, Matthew Robinson, Craig Leidholm
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Publication number: 20070169812Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.Type: ApplicationFiled: February 23, 2006Publication date: July 26, 2007Applicant: Nanosolar, Inc.Inventors: Matthew Robinson, Jeroen Van Duren, Craig Leidholm
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Publication number: 20070169809Abstract: A high-throughput method of forming a semiconductor precursor layer by use of low-melting chalcogenides is disclosed. In one embodiment, a method is provided that comprises of forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein amounts of the group IB or IIIA element and amounts of chalcogen in the particles are selected to be at a desired stoichiometric ratio for the group IB or IIIA chalcogenide that provides a melting temperature less than a highest melting temperature found on a phase diagram for any stoichiometric ratio of elements for the group IB or IIIA chalcogenide. The method includes disposing the particle precursor material over a surface of a substrate and heating the particle precursor material to a temperature sufficient to react the particles to form a film of a group IB-IIIA-chalcogenide compound. The method may include at least partially melting the particles.Type: ApplicationFiled: February 23, 2006Publication date: July 26, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Patent number: 7247346Abstract: Methods and apparatus for the rapid and parallel synthesis of optoelectronic cell devices and for the high-throughput screening of such devices for useful properties are disclosed. The methods comprise the parallel synthesis of arrays of optoelectronic devices fabricated within an addressable sample-holding matrix. Each optoelectronic device is created and tested within an addressable sample-holder in the fabrication device.Type: GrantFiled: April 28, 2003Date of Patent: July 24, 2007Assignee: Nanosolar, Inc.Inventors: Brian M. Sager, Martin R. Roscheisen, Klaus Petritsch
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Publication number: 20070163642Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.Type: ApplicationFiled: March 30, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Brian Sager
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Publication number: 20070163637Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Matthew Robinson, Jeroen Van Duren, Craig Leidholm
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Publication number: 20070163641Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.Type: ApplicationFiled: March 30, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Duren, Matthew Robinson, Brian Sager
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Publication number: 20070163383Abstract: Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor particles characterized by a precursor composition that provides sufficient malleability to form a planar shape from a non-planar starting shape when milled, and wherein overall amounts of elements from Groups IB, IIIA and/or VIA contained in the precursor particles combined are at a desired stoichiometric ratio of the elements. It should also be understood that other flakes such as but not limited to nanoflakes may also be used to form the precursor material.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Publication number: 20070163643Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase.Type: ApplicationFiled: March 30, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Brian Sager
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Publication number: 20070163639Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Matthew Robinson, Jeroen Van Duren, Craig Leidholm
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Publication number: 20070163644Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.Type: ApplicationFiled: March 30, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Brian Sager
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Publication number: 20070163638Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Publication number: 20070163640Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Publication number: 20070166453Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound.Type: ApplicationFiled: February 23, 2006Publication date: July 19, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Van Duren, Matthew Robinson, Craig Leidholm
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Patent number: 7227066Abstract: Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material are formed within the nanotubes of an insulating nanotube template. The dimensions of the nanotubes correspond to the dimensions of a crystalline grain formed by the deposition technique used to form the grains. A majority of the surface area of these grains is in contact with the wall of the nanotube template rather than with other grains.Type: GrantFiled: April 21, 2004Date of Patent: June 5, 2007Assignee: Nanosolar, Inc.Inventors: Martin R. Roscheisen, Brian M. Sager
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Publication number: 20070092648Abstract: A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA-chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.Type: ApplicationFiled: November 29, 2005Publication date: April 26, 2007Applicant: Nanosolar, Inc.Inventors: Jeroen Duren, Brent Bollman, Martin Roscheisen, Brian Sager
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Publication number: 20070074755Abstract: Solar cell modules and mounting methods are disclosed. A solar cell module includes one or more photovoltaic (PV) cells arranged in a substantially planar fashion. Each PV cell has a front side and a back side. The PV cells are adapted to produce an electric voltage when light is incident upon the front side. A rigid back plane is attached to the PV cells such that the back plane provides structural support from the back side. The rigid back plane includes a structural component having a plurality of voids.Type: ApplicationFiled: October 3, 2005Publication date: April 5, 2007Applicant: Nanosolar, Inc.Inventors: Chris Eberspacher, Phillip Capps, John Holager