Patents Assigned to NANOSPAN INDIA PRIVATE LIMITED
  • Publication number: 20230159399
    Abstract: A method for preparing a graphene-nanosheets based concrete additive is disclosed. The method comprises mixing Polycarboxylate ether A (PCE-A) to a retarder - based salt solution to obtain a retarder-based Polycarboxylate ether A solution. In the next step, a retarder based PCE solution is obtained by adding Polycarboxylate ether B to the retarder based Polycarboxylate ether A solution to which graphene nanosheets are added. Further, an air entrainment agent is added to graphene nanosheets based PCE solution and further mixed to obtain the graphene nanosheets based concrete additive.
    Type: Application
    Filed: November 18, 2022
    Publication date: May 25, 2023
    Applicant: Nanospan India Private Limited
    Inventors: Venkata Ramana Gedela, Ravi Nuguru
  • Patent number: 11456451
    Abstract: A method for preparing a dry electrode is disclosed. The method comprises mixing of nanoparticles and graphene nanosheets in powder form to obtain a nanocomposite. The nanocomposite is compressed to obtain a compacted material, which is rolled to obtain a three dimensional graphene architecture framework (3D-GAF) active film. The 3D-GAF active film is laminated on a current collector to obtain a three dimensional graphene architecture framework dry electrode for next generation energy storage devices.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: September 27, 2022
    Assignee: NANOSPAN INDIA PRIVATE LIMITED
    Inventors: Venkataramana Gedela, Ravi Kanth Nuguru
  • Publication number: 20210111394
    Abstract: A method for preparing a dry electrode is disclosed. The method comprises mixing of nanoparticles and graphene nanosheets in powder form to obtain a nanocomposite. The nanocomposite is compressed to obtain a compacted material, which is rolled to obtain a three dimensional graphene architecture framework (3D-GAF) active film. The 3D-GAF active film is laminated on a current collector to obtain a three dimensional graphene architecture framework dry electrode for next generation energy storage devices.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 15, 2021
    Applicant: NANOSPAN INDIA PRIVATE LIMITED
    Inventors: Venkataramana Gedela, Ravi Kanth Nuguru