Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

Abstract: Embodiments of a display device are described. The display device includes a liquid crystal display (LCD) module and a backlight unit designed to emit a primary light in a first wavelength region of an electromagnetic (EM) spectrum. The LCD module includes an array of pixels having at least one pixel with a sub-pixel that includes a layer of luminescent nanostructures and a layer of fluorescent material. The layer of luminescent nanostructures absorbs the primary light and emits a second light in a second wavelength region of the EM spectrum different from the first wavelength region. The layer of fluorescent material absorbs the primary light that has passed through the layer of luminescent nanostructures, and emits a third light in the second wavelength region of the EM spectrum.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: The present invention provides quantum dot compositions and methods of producing quantum dot compositions. The quantum dot compositions comprise a population of quantum dots, an aminosilicone polymer, an epoxy-functional silicone, and an organic resin. The present invention also provides quantum dot films comprising a quantum dot layer and methods of making quantum dot films.

Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Abstract: Embodiments of a flexible electroluminescent (EL) device are described. An EL device includes a device stack and a flexible substrate configured to support the device stack. The device stack can include a anode and a cathode, a quantum dot (QD) film positioned between the anode and the cathode and configured to produce light having a first peak wavelength. The device stack further includes a patterned insulating layer disposed on the anode and configured to form electrically active regions in the device stack and to control emission of the light from the EL device through the electrically active regions. The EL device further includes an encapsulation layer disposed on the cathode.

Abstract: Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a first portion of a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and is configured to prevent total internal reflection of a second portion of the secondary light. The light extraction layer has patterned features with one or more dimension in nanometer scale.

Abstract: Embodiments of a flexible electroluminescent (FEE) device are described. An FEE device includes a device stack with a quantum dot (QD) film configured to generate a first light having a first peak wavelength and a flexible substrate configured to support the device stack and emit a first portion of the first light. The FEE device further includes an encapsulation layer disposed on the device stack and an outcoupling layer disposed on the flexible substrate. The encapsulation layer can be configured to provide mechanical and environmental protection to the FEE device from moisture or oxygen. The outcoupling layer can be configured to prevent total internal reflection of a second portion of the first light within the flexible substrate and extract the second portion from the flexible substrate.

Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

Abstract: Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, or more one metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.

Abstract: Embodiments of a display device are described. The display device includes a backlight unit having a light source, a quantum dot film, and a radiation absorbing element. The quantum dot film is optically coupled to the light source and is configured to process light received from the light source. The radiation absorbing element is optically coupled to the quantum dot film and is configured to tune a spectral emission width of the processed light received from the quantum dot film to achieve over 90% color gamut coverage of a standard RGB color space.

Abstract: Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, a first transport layer disposed on the first electrode, an emission layer having luminescent nanostructures disposed on the first transport layer, a second transport layer having an organic layer, and a second electrode disposed on the second transport layer. A first portion of the organic layer is disposed on the emission layer and a second portion of the organic layer is disposed on the first transport layer.

Abstract: Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Abstract: Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a multi-layer stack and a first substrate configured to support the first light source. The multi-layer stack includes an organic phosphor film or a quantum dot (QD) based phosphor film configured to emit a first light having a first peak wavelength. The first substrate includes a first control circuitry configured to independently control the first light source. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a microLED or a miniLED configured to emit a second light having a second peak wavelength that is different from the first peak wavelength. The second peak wavelength can be in the blue wavelength region of the visible spectrum. The second substrate includes a second control circuitry configured to independently control the second light source.

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core/shell and a thin metal oxide on the outer shell of the nanostructure. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polyfunctional poly(alkylene oxide) ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.