Abstract: Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
Type:
Grant
Filed:
January 13, 2006
Date of Patent:
October 6, 2009
Assignee:
Nanotero, Inc.
Inventors:
Claude L. Bertin, Mitchell Meinhold, Steven L. Konsek, Thomas Rueckes, Frank Guo