Abstract: A method for a modified CMOS or solid-state process including using a double mask in the passivation process to form a passivation opening. The process includes applying a first mask to form a passivation layer and applying as second mask to form a SiO2 layer positioned underneath the passivation layer.

Abstract: An example one-time programmable (OTP) memory device is provided. The OTP memory device include a passivation layer. A top metal layer is positioned below the passivation layer. The top metal layer includes one or more holes configured to an etching medium to pass through the holes. An array of memory elements is positioned in a memory layer below the top metal layer. A first metal address line layer is positioned below the array of memory elements and includes a plurality of first address lines extending in a first direction. A first end of each memory element being connected to one of the plurality of first metal address lines. A second metal address line layer is positioned below the first metal address line layer and includes a plurality of second metal address lines extending in a second direction. The second direction is different than the first direction.

Abstract: An electrostatically-protected integrated circuit (IC) includes a pad configured to provide an electrical connection to outside of the IC. The IC also includes an electrostatic discharge (ESD) device that is electrically connected to the pad and includes a first gap configured to discharge an excessive voltage. A microelectromechanical (MEMS) device is further included that includes a second gap between at least two elements of the MEMS device such that a size of the first gap is less than a size of the second gap.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing and post backing was applied to form the MEMS device and where a plurality of passivation openings a vertically aligned above a pad.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: An example one-time programmable (OTP) memory device is provided. The OTP memory device include a passivation layer. A top metal layer is positioned below the passivation layer. The top metal layer includes one or more holes configured to an etching medium to pass through the holes. An array of memory elements is positioned in a memory layer below the top metal layer. A first metal address line layer is positioned below the array of memory elements and includes a plurality of first address lines extending in a first direction. A first end of each memory element being connected to one of the plurality of first metal address lines. A second metal address line layer is positioned below the first metal address line layer and includes a plurality of second metal address lines extending in a second direction. The second direction is different than the first direction.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: Electrical cigarettes and methods for performing the operations thereof are provided. An exemplary method includes: receiving, from a pressure sensor, pressure sensor data; computing , using the pressure sensor data and average pressure sensor data, differential pressure data; determining whether the differential pressure sensor data meet a first criteria involving a first set of thresholds; upon determining the differential pressure data does meet the first criteria, determining whether the differential pressure sensor data meet a second criteria involving a second set of thresholds; upon determining the pressure data does meet the second criteria, issuing a trigger signal indicating enough differential pressure is present for smoking.

Abstract: A MEMS pressure sensor is provided having a membrane made with one of plurality of metal layers. A lid is positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane. The lid includes an array of holes positioned on a region of the lid. A fixed metal electrode is positioned below the lid.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.