Abstract: A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substrate 11 having an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer (12) that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire (13) that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer (20) having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel.

Abstract: A metal rod guide (30) supports a metal rod (1) that can be inclined at an arbitrary angle, the support is instantaneously released to produce a free fall state, and during the release period, a first end surface (2) of the metal rod is impacted by a projectile (3) at the same angle as the metal rod, generating an elastic wave pulse in the metal rod. A direct current acceleration sensor (23) detects an acceleration arising when the elastic wave pulse reflects at the other end surface (22) of the metal rod. A strain gauge (25) provided on a side surface of the metal rod and/or a laser interferometer (24) measure strain and end surface motion and the measured values are processed to obtain a frequency response of the direct current acceleration sensor and measure frequency characteristics of the direct current acceleration sensor.

Abstract: On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on the V-grooves by selective growth of a Group III-V compound. The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser. Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.

Abstract: An acceleration sensor (22) to be calibrated and evaluated is affixed to one end surface (22) of a metal rod (1), and a plurality of projectiles (3) are made to impact the other end surface (2) of the metal rod at prescribed time intervals, generating an elastic wave pulse in the metal rod. Dynamic displacement, velocity or acceleration in a direction normal to the other end surface arising in a process of the generated elastic wave pulse reaching and being reflected by the one end surface where the acceleration sensor is affixed is measured, and an acceleration measured, processed and corrected by a strain gauge (25) attached to a side surface of the metal rod or by a laser interferometer (24) is obtained, and the corrected acceleration and the output of the acceleration sensor are compared to thereby carry out calibration and evaluation of the acceleration sensor.

Abstract: This invention provides a transcription factor that has functions of regulating the expression of a sulfur-assimilatory gene of koji mold during culture, and a gene encoding the same. This invention also relates to a protein comprising the amino acid sequence as shown in SEQ ID NO: 3, and a gene encoding the amino acid sequence as shown in SEQ ID NO: 3 or comprising the nucleotide sequence as shown in SEQ ID NO: 2.

Abstract: Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

Abstract: In a double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.

Abstract: The present invention provides compositional buffers for electronic ceramics containing volatile elements, and a method for manufacturing the same, as well as a method for manufacturing electronic ceramics using the compositional buffer.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.