Patents Assigned to NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
  • Ga2O3 semiconductor element
    Patent number: 9437689
    Abstract: A Ga2O3 semiconductor element includes: an n-type ?-Ga2O3 single crystal film, which is formed on a high-resistance ?-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type ?-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type ?-Ga2O3 single crystal film between the source electrode and the drain electrode.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: September 6, 2016
    Assignees: TAMURA CORPORATION, NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
    Inventors: Kohei Sasaki, Masataka Higashiwaki
  • Ga2O3 semiconductor element
    Patent number: 9397170
    Abstract: A Ga2O3 semiconductor element includes: an n-type ?-Ga2O3 single crystal film, which is formed on a high-resistance ?-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type ?-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type ?-Ga2O3 single crystal film between the source electrode and the drain electrode.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: July 19, 2016
    Assignees: TAMURA CORPORATION, NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
    Inventors: Kohei Sasaki, Masataka Higashiwaki