Abstract: A pattern reconfigurable antenna includes a radiator, a first parasitic element, a second parasitic element, a ground plane, a first switch and a second switch. The radiator includes a feed portion and a radiating portion that are interconnected. The first and second parasitic elements are symmetrically located at two opposite sides of the radiating portion, and are closely adjacent to and spaced apart from the radiating portion. The ground plane is located at another side of the radiating portion, and is spaced apart from the first and second parasitic elements. Each of the first and second switches is connected between the ground plane and a respective one of the first and second parasitic elements, and is operable to establish connection between the same.

Abstract: An interconnecting structure for electrically connecting a first electronic device with a second electronic device is provided. The first electronic device has two first bond-pads, and the second electronic device has two second bond-pads electrically connected to the two first bond-pads respectively. The interconnecting structure includes a signal transmission structure electrically connected to the two first bond-pads and the two second bond-pads; and a ground device disposed between the first electronic device and the second electronic device so that the first electronic device and the second electronic device have a same ground potential.

Abstract: A body channel communication method is disclosed including the following steps. Whether or not a body channel is established is detected. When that a body channel is established is detected, a check packet is received from an electrical device, which is at another end of the body channel, through the body channel. A current interference power of the body channel is estimated according to the received check packet. A current transmission mode for the body channel is obtained according to the current interference power. Data is transmitted through the body channel, which is set to the current transmission mode. Further, a body channel communication device is also disclosed.

Abstract: A series of ladder-type multifused arenes (hexacyclic, heptacyclic and nonacyclic units) and the synthesizing methods thereof are provided. The ladder-type multifused arenes are copolymerized with various electron-deficient acceptor units to afford various p-type low-band gap conjugated copolymers.

Abstract: The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element.