Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

Abstract: In a post-quantum asymmetric key generation method and system, a processing unit generates, based on a prime and an arithmetic function or a classical string, a prime vector which has an infinite number of components; generates a prime array based on the prime vector; generates an associated matrix based on the prime array; obtains, based on the associated matrix and a first reference prime, a first reference inverse prime array that serves as a private key; and obtains a public key that is paired with the private key based on a second reference inverse prime array. The second reference inverse prime array is obtained based on the associated matrix, the first reference prime, a second reference prime, and a randomization array.

Abstract: A system for synthesizing signal of user equipment and a method thereof are provided. The system includes a physical channel modeler and a physical channel training module. The physical channel modeler receives geo information of a field under test of and a sparse real physical field channel feature to build a physical channel model. The physical channel modeler estimates a plurality of predefined positions of the geo information to obtain a plurality of simulated physical field channel features corresponding to the predefined positions. The physical channel training module receives and performs training on the geo information, the sparse real physical field channel feature and the simulated physical field channel features by using an AI algorithm to perform an inference of a fully real physical field channel feature.

Abstract: A rotary coding disc and a method for designing the same is applied to an optical encoder. N-bit De Bruijn sequences include 1 and 0. The N-bit De Bruijn sequence has the maximum binary code and the minimum binary code. When a binary code having M bits is located between the maximum binary code and the minimum binary code, the corresponding N-bit De Bruijn sequences are selected as diagonal De Bruijn sequences, wherein 2 N - 2 ? N 2 - N 2 < M < 2 N - 2 ? N 2 + N 2 . The De Bruijn sequence may be converted into a De Bruijn energy level. The total number of 1 consecutively neighboring 0 and (N?1) consecutively neighboring N of the De Bruijn energy level is calculated. The transparent areas and the opaque areas are located based on the De Bruijn sequence or the De Bruijn energy level that corresponds to the total number less than or equal to N.

Abstract: A dual-polarized patch antenna includes a first insulating substrate; conductive connections, each of which passes through the first insulating substrate, and which are arranged to form a resonant cavity and two feeding ports; first and second metal layers respectively disposed on two opposite surfaces of the first insulating substrate, the second metal layer being formed with a cross-shaped slot that corresponds in position to the resonant cavity; a second insulating substrate disposed on the second metal layer; and four radiation patch units disposed on the second insulating substrate, and corresponding in position to four regions that are on the second metal layer and that are spaced apart by the cross-shaped slot.

Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

Abstract: An operation method of a robot for leading a follower to a destination within an open space includes: calculating a distance between the follower and the robot; when it is determined that the distance is not greater than a threshold, determining a pre-movement location of the robot in the open space and an orientation of the robot, and calculating a linear speed and an angular speed for the robot based on the pre-movement location and the orientation of the robot and the destination; moving according to the linear speed and the angular speed; determining whether the robot has arrived at the destination according to the current position; and repeating the previous steps when it is determined that the robot has not arrived at the destination.

Abstract: A data transmitting method using an LDPC code as an error correction code is provided. The method includes providing a parity check matrix of LDPC code, wherein the size of the parity check matrix is (m1+m2)×(n1+n2); in a sending side, encoding an input data of K bits with a encoder to generate a first block code of (n1+n2) bits, according to the parity check matrix; through a transmitting channel, sending n1 bits of the first block code from the sending side to a receiving side, wherein n2 bits of the first block code are not transmitted; and receiving the n1 bits of the first block code in the receiving side, and using the parity check matrix to perform a decoding algorithm to the received first block code to iterative decodes a second block code of (n1+n2) bits with a decoder. Furthermore, a data decoding method thereof is also provided.

Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.

Abstract: An optical displacement sensing system is provided. With configuration of an optical sensor disposed on a displacement platform and in cooperation with a broadband light source and an optical spectrum analyzer, when the displacement platform moves, the waveguide grating of the optical sensor is resonated and the reflected light provided with a resonance wavelength is formed. The waveguide grating has the plurality of grating periods, and when the displacement platform moves to a different position to make the broadband light source correspond to a different grating period, the position can correspond to the different resonance wavelength. Therefore, according to the aforementioned configuration, the position is determined according to the different resonance wavelength, instead of using an optical encoder; furthermore, the micrometer-scale or nanometer-scale displacement detection is achieved.

Abstract: An optical encoding device includes a code disc, an optical signal generator, (K+1) optical sensors and an encoding circuit. The code disk has K gratings arranged in a row. The total width of the optical sensors is equal to the total width W of the gratings. The optical sensor receives the optical signal through the code disk. Each optical sensor converts the optical signal into a voltage signal and outputs the voltage signal. The encoding circuit receives and normalizes the voltage signals to generate (K+1) voltage values. During a period in which the code disk rotates by a distance of 2W/K, the encoding circuit compares the voltage values with a preset value to generate at least two binary codes. When K is odd, the preset value is 0.5, and when K is even, the preset value is 0.55. The present invention can increase an absolute row resolution of the code disc.

Abstract: A method of manufacturing an amorphous carbon thin film is provided. The method includes the following steps: providing a substrate in a reaction chamber; flowing a precursor and a carrier gas into the reaction chamber; and performing a PECVD method to deposit the amorphous carbon thin film on the substrate. Wherein, the precursor includes a compound having a C?N functional group.

Abstract: Disclosed herein is a method of enhancing the accuracy and/or sensitivity of ultrasound imaging in detecting a tumor in a subject. The method comprises administering to the subject an effective amount of a nanoparticle prior to the application of ultrasound to the subject. According to certain embodiments of the present disclosure, the nanoparticle is a magnetic nanoparticle, for example, a gold, silver, or iron oxide nanoparticle. Also disclosed herein are methods of treating a tumor in a subject by detecting the tumor via ultrasound with the aid of a nanoparticle, and then administering to the subject an anti-cancer treatment based on the location of the tumor revealed by the ultrasound image.

Abstract: The present invention provides a carboxylated nanodiamond-mediated CRISPR-Cas9 delivery system for gene editing comprising nanodiamond (ND) particles as the carriers of CRISPR-Cas9 components designed to introduce the mutation in a given gene for repairing a tissue damage.

Abstract: A wireless charging device includes a wireless charging transmitter transmitting a charging signal to a signal gain module to generate at least one gain signal. The signal gain module includes an insulation substrate with an upper surface thereof provided with a first conductive wire. The first conductive wire makes at least one turns arranged along the inner edge of the insulation substrate. The lower surface of the insulation substrate is provided with a second conductive wire whose position corresponds to the position of the first conductive wire. A connecting element is arranged between the first conductive wire and the second conductive wire, such that the first conductive wire is electrically connected to the second conductive wire through the connecting element. The present invention provides a charging signal with high intensity to avoid the low charging efficiency caused by deflection and too long a distance.

Abstract: Structures and methods of forming self-aligned unsymmetric gate (SAUG) FinFET are provided. The SAUG FinFET structure has two different gate structures on opposite sides of each fin: a programming gate structure and a switching gate structure. The SAUG FinFET may be used as non-volatile memory (NVM) storage element that may be electrically programmed by trapping charges in the charge trapping dielectric (e.g., Si3N4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.

Abstract: A method for fabricating heteroepitaxial semiconductor material on a mica sheet is disclosed. Firstly, a mica substrate is provided. Then, at least one semiconductor film is deposited on the mica substrate to form a flexible substrate whose flexibility is applied to various applications, such as wearable devices, portable photoelectric equipment, or improving the speed and bandwidth of commercial and military systems, such that the flexible substrate has the competitiveness in the market.