Patents Assigned to NATIONAL INST. OF ADV. INDUST. SCIENCE AND TECH.
  • Mask Pattern Designing Method Using Optical Proximity Correction in Optical Lithography, Designing Device, and Semiconductor Device Manufacturing Method Using the Same
    Publication number: 20080276215
    Abstract: A method for designing a mask pattern realizes shortening the ever-growing time for the OPC treatment, decreases the fabrication TAT of a semiconductor device and cuts cost. A method for fabricating a semiconductor device uses the mask pattern designed. This invention performs the OPC treatment in advance on a cell library constituting the basic configuration of a semiconductor circuit pattern and prepares a semiconductor chip using the cell library that has undergone the OPC treatment.
    Type: Application
    Filed: March 28, 2006
    Publication date: November 6, 2008
    Applicants: National Inst. of Adv. Indust. Science and Tech., Runesas Technology Corporation
    Inventors: Tetsuya Higuchi, Hirokazu Nosato, Masahiro Murakawa, Hidenori Sakanashi, Nobuyuki Yoshioka, Tsuneo Terasawa, Toshihiko Tanaka
  • Low dielectric constant insulating material and semiconductor device using the material
    Publication number: 20060097393
    Abstract: The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.
    Type: Application
    Filed: March 26, 2004
    Publication date: May 11, 2006
    Applicant: NATIONAL INST. OF ADV. INDUST. SCIENCE AND TECH.
    Inventors: Yuko Uchimaru, Masami Inoue