Abstract: A dual-gate field effect transistor includes a substrate 1, a source 7-1, a drain 7-2, a vertical channel 5 provided between the source and the drain as rising from the substrate, a pair of gate insulation films 6-1 and 6-2 sandwiching the channel from a direction orthogonal to a carrier-running direction in the channel and a pair of gate electrodes 3-1 and 3-2 facing the vertical channel 5, respectively, via the pair of gate insulation films 6-1 and 6-2, wherein the pair of insulation films have different thicknesses t1 and t2. It is also possible that the pair of gate insulation films 6-1 and 6-2 have different permittivities ?1 and ?2 and that the pair of gate electrodes have different work functions ?1 and ?2. Thus, it is possible to set the threshold voltage of the dual-gate field effect transistor to a desired value when fabricating it. Furthermore, it is possible to avoid the problem of an increase in subthreshold slope that occurs in the prior art.

Abstract: The present invention provides a clay film with excellent flexibility, whose main component is natural clay or synthetic clay, and in which there is uniform orientation in the clay particle layer, and relates to a novel clay film that has enough mechanical strength to be used as a self-supporting film, and has a structure in which layers of clay particles are highly oriented, and in which the main constituent component of the clay film is mica, vermiculite, montmorillonite, iron montmorillonite, beidellite, saponite, hectorite, stevensite, or nontronite, and which has excellent flexibility, undergoes no structural change at high temperatures of 250° C. and up to 600° C., contains no pinholes, and has a gas permeation coefficient of less than 3.2×10?11 cm2s?1cmHg?1 at room temperature for helium, hydrogen, oxygen, nitrogen, or air.

Abstract: A digital system (1) which performs a digital processing according to a single or a plurality of clock signals to deliver a specified basic function, and which comprises a plurality of delay elements (4) respectively inserted into a plurality of clock circuits for supplying clock signals in a digital system, and respectively constituted by circuit elements for changing delay times according to values indicated by a control signal, and a plurality of holding circuits (5) for holding a plurality of control signals to be given to a plurality of delay elements. The plurality of holding circuits have a plurality of control signal values, held by these holding circuits, changed by external devices (6-8) according to a probabilistic search method with the digital system (1) supplied with power from a variable-output-voltage power supply (14) so that the basic function of the digital system satisfies specified specifications.

Abstract: An interface is provided that corresponds to an individual person without being restricted to a particular place within a room, by performing gesture recognition while identifying an individual person. A stereo camera (1) picks up an image of a user (4), and based on the image pickup output, an image processor 2 transmits a color image within a visual field and a distance image to an information integrated recognition device (3). The information integrated recognition device (3) identifies an individual by the face of the user (4), senses the position, and recognizes a significant gesture based on a hand sign of the user (4). The information integrated recognition device (3) executes a command corresponding the identified user (4) and performs operations of all devices (6) to be operated in the room (such as a TV set, an air conditioner, an electric fan, illumination, acoustic condition, and window opening/closing).

Abstract: There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 ?m. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.

Abstract: An angle detector with self-calibration capability has a number of first scale read heads and one second scale read head around the periphery of a single scale disk and includes means for performing self-calibration by determining measurement differences between the second scale read head and the individual first scale read heads and calculating the average thereof.