Patents Assigned to National Inst. of Advanced Ind. Science and Tech.
  • Publication number: 20030061883
    Abstract: The present invention provides a method and apparatus mainly for measuring mechanical properties, electrical properties and transducer properties (e.g., electromechanical coupling constant) of piezoelectrics, wherein three measurement specimens of the same material and the same dimension, each having parallel planes, and two insertion plates of the same material and the same dimension, each having known mechanical properties, are stacked alternately, a load is applied to these measurement specimens and insertion plates via the measurement specimens located on both end sides, the displacements in the direction of application of the load are measured before and after application of the load, and an elastic constant of the measurement specimen is determined based on those displacements, and the measurement of the electromechanical coupling constant is applied to the piezoelectrics by using the same apparatus under short-and-open circuit conditions.
    Type: Application
    Filed: August 29, 2002
    Publication date: April 3, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Masaaki Ichiki, Koichi Ozaki, Tokio Kitahara, Makoto Tanaka
  • Publication number: 20030059351
    Abstract: The present invention provides a chemical reactor for carrying out chemical reactions of substances to be treated in the presence of excess oxygen in which nitrogen oxides can be decomposed and removed with high efficiency and low energy consumption, wherein the catalytic reaction is utilized to reduce the content of excess oxygen during the chemical reactions.
    Type: Application
    Filed: July 19, 2002
    Publication date: March 27, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Masanobu Awano, Yoshinobu Fujishiro, Hae Jin Hwang, Sergei Bredikhin, Kazuyuki Matsuda, Kunihiro Maeda, Takao Kanai, Motoyuki Miyata
  • Publication number: 20030056570
    Abstract: The present invention relates to a flammable gas detection sensor that is a gas detection sensor which converts heat generated by the catalytic reaction between the catalyst component and a flammable gas to a voltage signal by a thermoelectric conversion effect and detects this signal as a detection signal, and is characterized by comprising as constituent elements thereof a catalyst component for initiating a catalytic reaction when in contact with a gas to be detected, and a film of thermoelectric conversion material which converts local temperature differences brought about by heat generated by the reaction to voltage signal; and also relates to a flammable gas concentration measurement method and a measurement apparatus thereof.
    Type: Application
    Filed: September 6, 2002
    Publication date: March 27, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Woosuck Shin, Norimitsu Murayama
  • Publication number: 20030054177
    Abstract: The present invention provides a multifunctional high-performance automatic chromogenic window coating material in which a vanadium dioxide based thermochromic material is coated by sputtering or the like onto a transparent substrate such as a piece of window glass, and a titanium dioxide based photocatalytic material that also acts as an antireflection film is coated thereon as an outermost layer.
    Type: Application
    Filed: March 20, 2002
    Publication date: March 20, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventor: Ping Jin
  • Publication number: 20030042851
    Abstract: A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
    Type: Application
    Filed: September 5, 2002
    Publication date: March 6, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Kakuya Iwata, Shigeru Niki, Paul Fons, Akimasa Yamada, Koji Matsubara
  • Publication number: 20030019762
    Abstract: The invention relates to a chemical reactor having an electrochemical cell containing a three-layer structure for the decomposition and removal of a substance treated by a chemical reaction.
    Type: Application
    Filed: March 20, 2002
    Publication date: January 30, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Masanobu Awano, Yoshinobu Fujishiro, Hae Jin Hwang, Sergei Bredikihin, Kazuyuki Matsuda, Kunihiro Maeda, Takao Kanai, Motoyuki Miyata
  • Publication number: 20030013266
    Abstract: A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap and the semiconductor region.
    Type: Application
    Filed: March 20, 2002
    Publication date: January 16, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Kenji Fukuda, Junji Senzaki, Ryoji Kosugi, Kazuo Arai, Seiji Suzuki
  • Publication number: 20020163323
    Abstract: The output current value of a direct-current power source obtained by low-frequency, minute modulation of the input voltage of a switching converter is detected in a circuit having an amplification factor switching function that switches the amplification factor between definite magnitudes synchronizing with the modulation, and by using a signal obtained by demodulating in a discriminator circuit the output of this circuit synchronizing with the modulation to control the switching converter, the power point of the switching converter can be tracked to the maximum power point by following the change in state of the direct current power source.
    Type: Application
    Filed: March 8, 2002
    Publication date: November 7, 2002
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Yuji Kasai, Fumihisa Kano
  • Publication number: 20020130354
    Abstract: A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.
    Type: Application
    Filed: March 13, 2002
    Publication date: September 19, 2002
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Toshihiro Sekigawa, Kenichi Ishii, Eiichi Suzuki
  • Publication number: 20020123187
    Abstract: The polygon-type semiconductor detector for use in a high-speed X-ray CT according to the present invention enables a high resolution, and allows the time and cost for manufacturing to be significantly reduced, by virtue of the detection pixel group thereof having mutually homogeneous characteristics. First, X-ray modules are each constructed by arranging a plurality of X-ray detection pixels (4) formed by means of photolithography in a line on a single planar semiconductor substrate constituted of CdTe. Then, by polygonally arranging a plurality of these X-ray modules on the circumference of a measuring section around a measuring area, this polygon-type semiconductor detector is formed. Thereby, when a multiphase fluid having mutually different densities flows in the measuring area (10), this polygon-type semiconductor detector can acquire the projection data of internal density distributions at a high speed.
    Type: Application
    Filed: January 30, 2002
    Publication date: September 5, 2002
    Applicant: National Inst. of Advanced Ind, Science and Tech.
    Inventor: Masaki Misawa
  • Publication number: 20020122457
    Abstract: A thermometer calibration method and fixed-point temperature realizing apparatus uses a fixed-point cell including a crucible of carbon and a fixed-point material enclosed in the crucible. The fixed-point material is a eutectic structure of carbide and carbon. The fixed-point cell is placed in a furnace for increasing and decreasing the environmental temperature of the cell. A thermometer to be calibrated is used to measure temperature variations in the cell and calibrated based on the temperature variations thus measured.
    Type: Application
    Filed: March 4, 2002
    Publication date: September 5, 2002
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Naohiko Sasajima, Yoshiro Yamada
  • Publication number: 20020070482
    Abstract: The present invention relates to a method of manufacturing hollow ceramics fibers with the pores of the micron-scale hollow structure unidirectionally oriented, the method of manufacturing is characterized in the steps of dispersing organic fibers in a dielectric liquid and applying high voltage to the dielectric liquid containing the dispersed organic fibers to electrostatically align them to produce a fiber accumulation in which the organic fibers are unidirectionally oriented, using said fiber accumulation as a mold and dipping said fiber accumulation in a ceramics base solution, and then removing said mold by treatment with heat or organic solvents.
    Type: Application
    Filed: September 19, 2001
    Publication date: June 13, 2002
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Atsushi Hozumi, Yoshiyuki Yokogawa, Tetsuya Kameyama