Abstract: The invention provides a new GC/ICP-MS capable of preventing carbon deposition caused by the analysis sample or its solvent. With a GC/ICP-MS, it is effective to introduce oxygen continuously or during a specific period to the part where argon or other makeup gas is introduced to the ICP-MS, and this is achieved by introducing oxygen in air into the gas supply line using an oxygen permeable tube or oxygen permeable membrane. A selector valve is used to introduce permeated oxygen to the aforementioned gas supply line only during a desired period.
Type:
Grant
Filed:
September 5, 2007
Date of Patent:
July 17, 2012
Assignee:
National Institue of Advanced Industrial Science and Technology
Abstract: Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.
Type:
Application
Filed:
June 5, 2009
Publication date:
March 31, 2011
Applicant:
National Institue of Advanced Industrial Science and Technology
Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
Type:
Application
Filed:
January 26, 2006
Publication date:
August 14, 2008
Applicant:
NATIONAL INSTITUE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Abstract: A usability evaluation processing system and method evaluate usability by simulation for estimating operating interaction between a user and a human interface. The usability evaluation processing system and method receive a simulation start command; input data into virtual-operation-object state data storing means, virtual-operator state data storing means, and operation procedure data storing means; perform a simulation to update virtual-operation-object state data and virtual-operator state data to states at the next time step by simulation processing means in response to a virtual-operator control signal; calculate a value of a usability evaluation function in accordance with at least one of the virtual-operation-object state data and the virtual-operator state data updated by the simulation processing means, or a history of the updated data; and output the resultant value and resultant data of the simulation.
Type:
Grant
Filed:
August 12, 2004
Date of Patent:
October 16, 2007
Assignee:
National Institue of Advanced Industrial Science and Technology
Abstract: An organic compound having an affinity for a resin of a molded resin article and sublimation properties is allowed to penetrate/disperse into the surface of the molded resin article, thereby modifying and/or coloring a resin surface layer. The molded resin article and the organic compound having the affinity for the resin and the sublimation properties are put into a tightly closable container, and the pressure and the temperature in the container are adjusted to place them in a saturated sublimation pressure state of the organic compound, whereby a vapor of the organic compound is uniformly deposited on the surface of the molded resin article and it further penetrates/disperses into the resin surface layer, and in consequence, the resin surface layer can be modified and/or colored. In addition, the modification of the resin surface layer permits imparting a function thereto.
Type:
Grant
Filed:
March 31, 2000
Date of Patent:
July 18, 2006
Assignees:
National Institue of Advanced Industrial Science and Technology, Dainichiseika Color & Chemicals Mfg. Co., Ltd.
Abstract: The invention relates to a method for putting color to glass. This method includes the steps of (a) introducing a laser beam into an interferometer such that the laser beam is split into at least first and second laser beams in the interferometer and that the at least first and second laser beams come out of the interferometer; and (b) irradiating a glass with the at least first and second laser beams to write a plurality of lines simultaneously on a surface of the glass and/or in an inside of the glass.
Type:
Application
Filed:
May 29, 2003
Publication date:
January 22, 2004
Applicants:
Central Glass Company, Limited, National Institue of Advanced Industrial Science and Technology