Abstract: In an analysis of a fluid component using a nanomechanical sensor covered with a receptor, the same receptor is caused to express different response characteristics. In a measuring system of analyzing a response when a sample gas and a purge gas are supplied to a nanomechanical sensor while switching the sample gas and the purge gas, a gas (external gas) different from both gases is mixed into a gas channel and supplied to the sensor for measurement. Since a response characteristic of a receptor is modulated by mixing of the external gas, the object described above is achieved.

Abstract: Provided is a novel material analysis technique using a chemical sensor. By reversing the conventional approach, a material to be measured is provided as a receptor of the chemical sensor, and a response signal of the chemical sensor obtained by supplying a known gas or the like to the chemical sensor is obtained. From the response signal, it is possible to identify and distinguish the receptor material, and to obtain its composition and the like. By analyzing the response signal by means of a statistical or machine learning technique such as principal component analysis, linear discriminant analysis, or a support vector machine, the above-mentioned identification and the like can be performed with high accuracy.

Abstract: The present invention provides a lithium ion capacitor (LIC) that achieves high specific capacity and high energy density. The lithium ion capacitor according to the present invention includes a cathode, an anode arranged apart from the cathode, and a Li-ion electrolyte with which a space between the cathode and the anode is filled. The cathode is made of a composite of graphene and carbon nanotubes, the anode is made of a Li-doped composite of graphene and carbon nanotubes, and the mass ratio of the anode to the cathode is larger than 0 and less than 1.0.

Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

Abstract: A self-supporting multifunctional film is provided based on natural poly-phenols such as tannic acid. The self-supporting film composition of the invention contains a tannic acid derivative in which 12% to 24% of hydroxyl groups in tannic acid are bonded via urethane bonds that are formed by way of reactions with cyanate groups. Preferably, the film composition further includes a precursor polymer and 45 to 65% by mass of tannic acid and 55 to 35% by mass of the precursor polymer. Preferably, the precursor polymer has a second linear hydrocarbon compound urethane-bonded to both ends of a first linear hydrocarbon compound, and more preferably a diisocyanate group having an oligoethyene glycol as a spacer. Preferably, the ratio of the urethane bonds contained in the precursor polymer to the hydroxyl groups contained in the tannic acid is (12:88) to (24:76) inclusive in terms of molar ratio.

Abstract: A non-woven fabric including fibers including an aliphatic polyester that has at least two maximum values in a molecular weight distribution thereof, wherein the fibers have a fiber diameter falling within the range of 100 to 3000 nm. The non-woven fabric of the present invention has excellent biodegradability.

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [??m2] or more and 3 [??m2] or less.

Abstract: Provided are a barium germanium oxide having a 3-4 eV band gap, a method for producing the same, a sintered body thereof, and a target thereof. The barium germanium oxide includes at least Ba, Ge, and O, includes a crystal represented by a general formula of ABO3 (here, A includes at least Ba and B includes at least Ge), and has a hexagonal 6H-type perovskite structure.

Abstract: Surface-functionalized nano structures, arrays of the nanostructures, and method for using the arrays in surfaced-enhanced spectroscopy and dielectric sensing applications, such as surface-enhanced infrared absorption spectroscopy, are provided. The nanostructures are functionalized with specific binding moieties that are bound to the nanostructures via phosphonic acid linkers.

Abstract: Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y1-x-y-zLuxGdyCez)3+aAl5?aO12 (0?x?0.9994, 0?y?0.0669, 0.001?z?0.004, ?0.016?a?0.315) and a particle diameter (D50) of not less than 20 ?m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1-31 xAlx (0<x?1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.

Abstract: An object of the present invention is to provide a novel electrochromic device (ECD).

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn?3CnO3n+1??<Formula 1> wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

Abstract: A phosphor, combined with LED having not exceeding 470 nm, of high emission intensity and with chemical and thermal stability is provided. The phosphor according to the present invention comprises an inorganic compound in which element A (A is one or two or more kinds of elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved in an inorganic crystal including at least metal element M and non-metal element X and represented by MnXn+1 (3?n?52), an inorganic crystal having the same crystal structure, or an inorganic crystal including a solid solution thereof. Here, M comprises at least Al and Si, and if necessary element L (L is a metal element other than Al and Si) and X comprises N, O if necessary, and element Z if necessary (Z is a non-metal element other than N and O).

Abstract: The present invention focuses on a material constituting a contact pin and a processing technique of the material, and is directed to manufacturing a conductive member by using a material and a processing technique which are different from those in the related art. The conductive member is obtained by applying etching treatment to a copper-silver alloy including copper and silver while using at least copper alloy etching liquid, but silver etching liquid may also be selectively added to the copper alloy etching liquid.

Abstract: Adding multiple solute elements could create fracture origin through formation of intermetallic compound due to bonding of added elements. While maintaining microstructure for activating non-basal dislocation movement, additive elements not to create fracture origin, but to promote grain boundary sliding are preferably found from among inexpensive and versatile elements. Provided is Mg-based wrought alloy material including two or more among group consisting of Mn, Zr, Bi, and Sn; and Mg and unavoidable constituents, having excellent room-temperature ductility and characterized by having finer crystal grain size in Mg parent phase during room-temperature deformation and in that mean grain size in matrix thereof is 20 ?m or smaller; rate of (?max??bk)/?max (maximum load stress (?max), breaking stress (?bk)) in stress-strain curve obtained by tension-compression test of the wrought material is 0.2 or higher; and resistance against breakage shows 200 kJ or higher.

Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Abstract: A magnesium alloy of the present invention has a structure, comprising: 0.5-2.0 wt % of Zn; 0.3-0.8 wt % of Ca; at least 0.2 wt % of Zr; and the remainder comprising Mg and unavoidable impurities, wherein a nanometer-sized precipitate comprising Mg, Ca and Zn dispersed on the (0001) plane of a magnesium matrix, thereby achieving both formability and strength in a range of temperatures including room temperature.

Abstract: Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.

Abstract: A phosphor in which an element represented by R? is solid-solutionized in a phosphor host crystal represented by M?(L, A)?X?, wherein M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn, L is at least one type of element selected from Li, Na and K, A is at least one type of element selected from Al, Ga, B, In, Sc, Y, La and Si, X is at least one type of element selected from O, N, F and Cl (where all of X being N is excluded), R is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb, ?, ?, ? and ? satisfy ?+?+?+?=9, 0.00<??1.30, 3.70???4.30, 3.70???4.30, and 0.00<??1.30.