Abstract: A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity. In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.
Type:
Application
Filed:
October 19, 2005
Publication date:
April 20, 2006
Applicant:
National Institute of Adv. Industrial Sci. & Tech.
Abstract: The present invention provides a method of manufacturing a porous thick film of an oxide that has extremely few cracks and can be satisfactorily used as an oxygen partial pressure detecting part of an oxygen sensor.
Type:
Application
Filed:
December 22, 2003
Publication date:
March 16, 2006
Applicant:
National Institute of Adv. Industrial Sci. & Tech
Abstract: In the detection of fluorescence Lf emitted by a micro-object irradiated with an excitation light Le by a semiconductor light-detecting element 20, a converging microlens 62 for converging the excitation light Le elevating the optical density thereof and irradiating the micro-object with the light, causing the micro-object to generate fluorescence Lf due to two-photon absorption, is inserted partway along the light path of the excitation light Le. This enables the fluorescence Lf emitted by the micro-object to be detected with high sensitivity.
Type:
Application
Filed:
February 28, 2005
Publication date:
October 27, 2005
Applicant:
National Institute of Adv. Industrial Sci. & Tech.