Abstract: A resin composition (2) such as a photo-curable resin composition or a heat curable or thermosetting resin composition is placed on an optical substrate (1). A printing pressure is applied to the side of the resin composition (2) of the optical substrate (1) with the resin composition (2) by means of an extra-flat pressing plate having a flatter plane than the optical substrate (1). The resin composition is cured by utilizing light or a temperature change to form a composite substrate. A thin film (4) such as a functional inorganic optical film, a dielectric multilayered optical thin film, or an optical functional metallic film is stacked on the composite substrate, for example, by low-temperature sputtering or ion beam sputtering to form an optical component such as a reflection mirror, a beam splitter, a band-pass filter, a band-stop filter, and an edge filter.

Abstract: An object of the present invention is to improve durability of a pressure vessel for blasting an article to be treated such as hazardous substance or explosive therein. The pressure vessel 10, means for achieving the object, has an external vessel 31 and an internal vessel 32 installed in the external vessel 31. The external vessel 31 has a strength for retaining pressure caused by blasting the article. The internal vessel 32 receives fragments of the treated article 100 to protect the external vessel 31 against the fragments. The internal vessel 32 preferably covers almost entire internal surface of the external vessel 31.

Abstract: A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high blocking voltage and high channel mobility is manufactured by optimizing the heat-treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.

Abstract: The present invention provides a more reliable safety monitoring device on the station platform, where the safety monitoring device detects the fall of a person on the platform edge on the railroad-track side onto a railroad track with stability, recognizes at least two persons, and obtains the entire action log thereof. The present invention recognizes the person at the platform edge by distance information and texture information and determines the position on the platform edge. At the same time, the present invention detects the case where the person falls onto the railroad track with stability and automatically transmits a stop signal or the like. At the same time, the present invention transmits an image of the corresponding camera. Further, the present invention records the entire action of all persons moving on the platform edge.

Abstract: A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high voltage resistancehigh blocking voltage and high channel mobility is manufactured by opting the heat treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.

Abstract: The present invention provides a resistance-type oxygen sensor, and an oxygen sensor device and an air/fuel ratio control system using same. The present invention relates to a resistance-type oxygen sensor with suppressed temperature dependence, wherein: (1) a gas detection unit composed of an oxide semiconductor with a resistance value varying according to temperature and the oxygen partial pressure of atmospheric gas and a temperature compensation unit composed of a conductor with suppressed dependence of a resistance value on oxygen partial pressure are connected in series; (2) the temperature compensation unit is composed of an oxygen ion conductor; and (3) an electrode for electric contact with the temperature compensation unit is exposed to the atmospheric gas and is a porous body; an oxygen sensor device and an air/fuel ratio control system.

Abstract: Ultrahigh speed magnetic resonance imaging equipment is capable of predicting temporal and spatial operation of an object to be imaged and significantly reducing the number of phase and frequency encodings, thereby significantly increasing the imaging speed. An object (4) to be imaged is placed in a static magnetic field (3) and a gradient magnetic field and a radiofrequency wave are applied to the object in an x, y and/or z direction in an orthogonal coordinates system. The equipment includes means for collecting only phase and frequency encodings optimized based on an estimate of motion of the object (4) to be imaged and means for complementing unacquired data. By increasing the imaging speed, as described above, the temporal resolution is improved and it is possible to display a two-dimensional cross section and three-dimensional internal structure of the object in motion as an image. As a result imaging is possible even when the object (4) to be imaged is temporally deformed or displaced.