Patents Assigned to National Institute of Advanced Industrial Science Nad Technology
  • Magnetoresistance effect device and method of production of the same
    Patent number: 8934290
    Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: January 13, 2015
    Assignees: Canon Anelva Corporation, National Institute of Advanced Industrial Science Nad Technology
    Inventors: David D. Djayaprawira, Koji Tsunekawa, Motonobu Nagai, Hiroki Maehara, Shinji Yamagata, Naoki Watanabe, Shinji Yuasa