Abstract: A semiconductor device capable of inhibiting a threshold voltage from increase also when employing a gate electrode consisting of a metal is provided. This semiconductor device comprises a pair of source/drain regions lifted up in an elevated structure, a gate insulator film, formed on a channel region, consisting of a high dielectric constant insulator film having a dielectric constant larger than 3.9 and a gate electrode including a first metal layer coming into contact with the gate insulator film and having a work function controlled to have a Fermi level around the energy level of a band gap end of silicon constituting the source/drain regions.

Abstract: A crystal substance formed by precipitating as fibrous aggregates by making a metal aliphatic carboxylate dissolve completely in pure water, stirring, and gradually cooling the resulting solution. A method of preparing the fibrous crystal aggregates. A material for recovering flowing oil and method of recovering flowing oil by using the fibrous crystal aggregates. A material for solidifying liquid hydrocarbon, waste tempura oil and edible oil and method of solidifying liquid hydrocarbon, waste tempura oil and edible oil by using the fibrous crystal aggregates. A method of preparing the solidifying material.

Abstract: A gas sensor comprising a sensor element including an organic-inorganic hybrid material. The sensor element has layers of an inorganic compound and an organic compound intercalated between the layers of an inorganic compound.

Abstract: A method for making gas hydrate comprising generating ultrafine bubbles in an aqueous solution; and spontaneously generating hydrate nuclei by self-compression and collapsing of the ultrafine bubbles.

Abstract: A solar cell substrate has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan &thgr; is in a range of 0.10 to 0.30, where &thgr; is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. Light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer, resulting in improved efficiency. Additionally, the photo-electric conversion layer can be made thinner reducing deposit time and manufacturing cost. Further, collision of crystals is not incurred, thus preventing deterioration of photo-electric conversion efficiency which is caused by defects.

Abstract: A film obtained by heating a coating of a resin composition at a temperature lower than 300° C. but not lower than 40° C. in air or in an inert atmosphere. The resin composition includes a hydrosilylated polymer obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n  (1) wherein n is an integer of 4-1000, with at least one compound of the following formula (2) R1—C≡C—R2  (2) wherein R1 represents a hydrogen atom, a monovalent organic group or a monovalent organosilicon group and R2 represents a hydrogen atom or a group of the formula: —(R′)q—C≡C—R where R′ represents a divalent organic group or a divalent organometallic group, R represents a monovalent organic group or a monovalent organosilicon group and q is 0 or 1 with the proviso that when R1 is a hydrogen atom R2 is a hydrogen atom.

Abstract: To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).

Abstract: A feature-pattern extraction apparatus uses a logarithmic transformation processing to extract a feature pattern from a myoelectric pattern that is a muscle action potential. The extracted feature patterns are classified, and an output control signal is generated. By using the logarithmic transformation processing to extract feature patterns, distribution bias is reduced, improving classification accuracy.

Abstract: A system for bleaching discolored teeth is provided, and this system has a function irradiating light emitted from a light-emitting section to the surface of teeth applied with a chemical agent including titanium dioxide and hydrogen peroxide, a irradiation energy of wavelength 380 to 420 nm of the light emitted from the light-emitting section is at least 37 mW/cm2 and the ratio of irradiation energy of wavelength 380 to 420 nm with respect to the irradiation energy of wavelength 200 to 800 nm thereof is at least 36% at this light-emitting section, and whereby it is possible to obtain high bleaching effect of the teeth, to reduce the heat applied to the teeth to a low level (no more than 40° C.) and to reduce emission of ultraviolet light that has an adverse effect on the human body to a low level.

Abstract: There is provided a slider displacement direction conversion mechanism in an electrostatic actuator which can convert the displacement direction of a slider in the perpendicular direction to a substrate surface, the mechanism comprises a slider which is displaced under the force from the electrostatic actuator generating the electrostatic force parallel to the substrate surface, and a plurality of elastic beams fixed to a substrate which supports the slider, the elastic beams are entirely or locally provided with displaceable members supporting the slider, and the displaceable member is easily displaced in the direction different from the displacement direction when the slider is subjected to the force in the displacement direction.

Abstract: A flow rate measuring apparatus capable of accurately measuring a flow rate of fluctuating fluid. A mode setting circuit selectively sets any one of a plurality of predetermined transmission modes different in transmission timing. The mode setting circuit sets any one of a first transmission mode which permits an ultrasonic wave to be transmitted at a predetermined timing for every period of a flow waveform of exhaust gas, a second transmission mode which permits an ultrasonic wave to be transmitted at a timing shifted by a predetermined time for every period of the flow waveform of the exhaust gas and a third transmission mode which permits an ultrasonic wave to be transmitted at predetermined intervals.

Abstract: A method of producing fine particles of an oxide of a metal, comprising the steps of: preparing an acidic solution which contains ions of the metal; precipitating fine particles of a hydroxide of the metal by adding an alkaline solution to the acidic solution; collecting the fine particles of the hydroxide of the metal precipitated in a mixed solution of the acidic solution and the alkaline solution; mixing fine particles of a carbon with the collected fine particles of the hydroxide of the metal; and heat-treating a mixture of the fine particles of the hydroxide of the metal and the fine particles of the carbon at a predetermined temperature in a non-reducing atmosphere, whereby the fine particles of the oxide of the metal are produced.

Abstract: The invention is directed to novel thermostable aminotransferases useful in synthesizing an amino acid derivative with high optical purity, and nucleic acids encoding the enzyme. The invention also includes antibodies that specifically bind to the aminotransferases of the invention.

Abstract: This invention relates to a photosensitive polyimide material having positive-type or negative-type photosensitivity, which may be developed with a high resolution with an irradiation energy having short wavelength such as ultraviolet light or electron beam. The positive-type photosensitive polyimide composition comprising a solvent-soluble polyimide which shows positive-type photosensitivity in the presence of a photoacid generator, which is obtained by polycondensation of at least one aliphatic tetracarboxylic dianhydride and/or alicyclic tetracarboxylic dianhydride and at least one aliphatic diamine and/or alicyclic diamine and/or diaminosiloxane; and the photoacid generator. Since the polyimide has negative-type photosensitivity when irradiated with electron beam in the absence of a photoacid generator, a method for forming negative-type polyimide pattern using the polyimide is also provided.

Abstract: A material for fixing gaseous hydrocarbon containing fibrous crystal aggregates formed by precipitating by making a metal aliphatic carboxylate dissolve completely in pure water to give a solution, stirring and gradually cooling the resulting solution; a method of preparing the fixing material; and a method of adsorbing and solidifying gaseous hydrocarbon by using the fixing material.

Abstract: A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.

Abstract: A molding obtained by heating a hydrosilylated polymer at a temperature higher than the softening point or melting point thereof. The hydrosilylated polymer is obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n  (1) wherein n is an integer of 4-1000, with at least one divinylsiloxane compound of the following formula (2): CH2═CH—SiR2—O—(SiR2.O)q—(SiR′2.O)q′—SiR2—CH═CH2  (2) wherein R and R′ are independently selected from alkyl groups, substituted alkyl groups, aryl groups and substituted aryl groups, and q and q′ are each an integer of 0 or more.

Abstract: A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.

Abstract: An apparatus for measuring electromagnetic characteristics includes a sample rod with a sample fixed to a lower part thereof, a helium 3 refrigerator, in which the sample rod is inserted, having a main pipe that forms around the sample rod a space that is cooled by helium 3, a device for supplying helium 3 to the helium 3 refrigerator, an inner tube portion, into which the main pipe is inserted, that supports at an upper part thereof the refrigerator, an outer tube that cools an outer periphery of the inner tube with helium, a liquid helium container that supplies liquid helium to the outer tube, and a device for measuring the electromagnetic characteristics of the sample.

Abstract: Proposed are a selective reduction type high temperature superconductor and methods of making the same, the superconductor having a pair of charge supply layers each formed of a Cu1-xMx surface (1, 1), a first superconducting layer formed of a 5-coordination CuO2 surface (2) and a second superconducting layer formed of a 4-coordination CuO2 surface (3). Reducing M ions (e.g., Tl ions) in the charge supply layers by heat treatment in a reducing atmosphere enables the 5-coordination CuO2 surface (2) as the first superconducting layer to be over-doped and the 4-coordination CuO2 surface (3) as the second superconducting layer to be optimum-doped. According to the present invention, a high temperature superconductor is provided that with its critical temperature held high has a reduced superconducting anisotropy &ggr;, and provides a high critical current density Jc and a high c irreversibility field Hirr.