Patents Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIALS SCIENCE AND TECHNOLOGY
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Publication number: 20150206729Abstract: An object is to mix multiple liquids sufficiently and then nebulize the mixed liquids while maintaining the nebulizing efficiency. A nebulizer includes a first inner tube disposed inside an outer tube and having therein a first sample passage through which a first liquid sample flows, a second inner tube disposed inside the outer tube in parallel with the first inner tube and having therein a second sample passage through which a second liquid sample flows, a membranous member disposed with a gap between the membranous member and sample outlets formed at respective ends of the inner tubes. The gap forms mixing space in which a gas passing through a gas passage converts the first and second liquid samples flowing out of the sample outlets into droplets and mixes the droplets and the membranous member has multiple holes through which the mixed liquid samples pass along with the gas.Type: ApplicationFiled: January 15, 2015Publication date: July 23, 2015Applicants: S.T. JAPAN INC., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kazumi INAGAKI, Shin-ichiro FUJII, Shin-ichi MIYASHITA, Koichi CHIBA, Takao NAKAGAWA, Masaaki ABE, Nobuyoshi KITAGAWA, Yosuke NAKAGAWA
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Patent number: 9082525Abstract: A lithium silicate-based compound according to the present invention is expressed by a general formula, Li(2?a+b)AaMn(1?x?y)CoxMySiO(4+?)Cl? (In the formula: “A” is at least one element selected from the group consisting of Na, K, Rb and Cs; “M” is at least one member selected from the group consisting of Mg, Ca, Al, Ni, Fe, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W; and the respective subscripts appear to be as follows: 0?“a”<0.2; 0?“b”<1; 0<“x”<1; 0?“y”?0.5; ?0.25?“?”?1.25; and 0?“?”?0.05). The lithium silicate-based compound is used as a positive-electrode active material for secondary battery whose discharge average voltage is higher, and which is able to sorb and desorb lithium ions.Type: GrantFiled: October 12, 2012Date of Patent: July 14, 2015Assignees: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Akira Kojima, Toshikatsu Kojima, Mitsuharu Tabuchi, Tetsuo Sakai, Takuhiro Miyuki, Junichi Niwa, Kazuhito Kawasumi, Masakazu Murase
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Patent number: 9074278Abstract: Small crystal size is the issue of a conventional method for formation of a film of graphene by a thermal CVD technique using a copper foil as a substrate. A carbon film laminate is described in which graphene having a larger crystal size is formed. The carbon film laminate is configured to include a sapphire single crystal having a surface composed of terrace surfaces which are flat at the atomic level, and atomic-layer steps, a copper single crystal thin film formed by epitaxial growth on the substrate, and graphene deposited on the copper single crystal thin film, and thus enabling formation of graphene having a large crystal size.Type: GrantFiled: February 25, 2011Date of Patent: July 7, 2015Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Masataka Hasegawa, Masatou Ishihara, Yoshinori Koga, Jaeho Kim, Kazuo Tsugawa, Sumio Iijima
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Patent number: 9076906Abstract: A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.Type: GrantFiled: February 12, 2010Date of Patent: July 7, 2015Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Mutsuo Ogura, SungWoo Choi, Nobuyuki Hayama, Katsuhiko Nishida
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Publication number: 20150187652Abstract: A method for producing a composite wafer by using a forming wafer having a monocrystal layer, the method comprising: (a) forming, on the monocrystal layer of the forming wafer, a sacrificial layer and a semiconductor crystal layer sequentially; (b) causing a first front surface that is the front surface of a layer formed on the forming wafer to face a second front surface that is the front surface of the transfer target wafer or of a layer formed on the transfer target wafer and is to contact the first front surface, and bonding the forming wafer and the transfer target wafer; and (c) etching the sacrificial layer, and separating the forming wafer from the transfer target wafer in a state that the semiconductor crystal layer is left on the transfer target wafer, wherein the (a) to the (c) are repeated by using the forming wafer separated in the (c).Type: ApplicationFiled: January 28, 2015Publication date: July 2, 2015Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, HITACHI KOKUSAI ELECTRIC INC.Inventors: Taketsugu YAMAMOTO, Takeshi AOKI, Tatsuro MAEDA, Eiko MIEDA, Toshiyuki KIKUCHI, Arito OGAWA
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Patent number: 9070941Abstract: [Object] The object is to provide a negative electrode material for a lithium secondary battery, wherein a sulfide-based negative electrode with water-resistant properties can exert excellent cycle characteristics and high output performance while maintaining a high discharge capacity and there is no precipitation of lithium dendrites during charge at low temperature. [Means for Solving Problems] A negative electrode material for a lithium secondary battery comprising sulfur and sulfide glass including the following components (i) and (ii): (i) at least one or more elements selected from a group consisting of Sb, As, Bi, Ge, Si, Cu, Zn, Pd, In and Zr; and (ii) at least one or more elements selected from a group consisting of Se, Te, Ga, Sn, Pb, Cd, Al, Fe, Mg, Ca, Co, Ag, Sr, P and Ba, wherein the ratio of the above components is sulfur: 40-80 mol %, (i): 1-50 mol % and (ii): 1-50 mol %, respectively.Type: GrantFiled: December 9, 2011Date of Patent: June 30, 2015Assignees: National Institute of Advanced Industrial Science and Technology, Isuzu Glass Company, Ltd.Inventors: Takashi Mukai, Taichi Sakamoto, Tetsuo Sakai, Kunihiko Tani, Naoto Yamashita, Koichiro Ikeda
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Patent number: 9065139Abstract: Provided is a method for mass manufacturing, at low cost, of a fiber positive electrode for a lithium secondary battery, which has excellent charge/discharge cycle characteristics, and which is capable of charging/discharging with high current density, and a main active material of which is a lithium-doped transition metal oxide. The method includes the steps of: (a) forming a tubular coating of either a transition metal oxide or a transition metal hydroxide on a carbon fiber current collector; and (b) performing, in a lithium ion containing solution in a sealed system under presence of an oxidant or a reductant, heat treatment at 100 to 250° C. on the carbon fiber current collector, on which the tubular coating of either the transition metal oxide or the transition metal hydroxide is formed, to obtain a coating of a lithium-doped transition metal oxide on the carbon fiber current collector.Type: GrantFiled: February 2, 2010Date of Patent: June 23, 2015Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, KAWASAKI JUKOGYO KABUSHIKI KAISHAInventors: Tetsuo Sakai, Jinhan Yao, Takashi Mukai, Tomoaki Takasaki, Kazuo Tsutsumi, Kazuya Nishimura
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Publication number: 20150166619Abstract: A technology which enables a high yield and convenient recovery of a protein and also enables a global protein purification is provided. A protein tag comprising an amino acid sequence of the full length or a part of MafG protein or an amino acid sequence in which amino acids serving as protease cleavage sites were inserted into the former amino acid sequence is provided. Since this protein tag can impart a high insolubility attributable to MafG protein to a protein to be tagged thereby insolubilizing the tagged protein, the tagged protein can be recovered into an insoluble fraction at a high yield.Type: ApplicationFiled: November 21, 2012Publication date: June 18, 2015Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Naoki Goshima, Eriko Fukuda, Masatoshi Mori
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Publication number: 20150171169Abstract: In the present invention, a p-type pillar layer constituting a super junction is formed separately into an upper layer in contact with a base layer and an underlying lower layer. The upper layer has a higher impurity concentration than the lower layer. An interface between the upper layer and the lower layer of the pillar layer and a contact point between the interface and a drift layer are located below the bottom of a trench groove. This allows depletion in an upper portion of an n-type pillar to occur at a lower voltage than in a lower portion thereof in the blocking state. Thus, the application of an electric field to an oxide film can be suppressed without sacrificing the other characteristics, and the device is successfully prevented from being broken.Type: ApplicationFiled: April 23, 2013Publication date: June 18, 2015Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventor: Shinsuke Harada
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Publication number: 20150168801Abstract: A reflection-type optical control element has an optical control layer whose state is reversibly changed between a transparent state caused by hydrogenation and a reflective state caused by dehydrogenation, a catalyst layer that accelerates the hydrogenation and the dehydrogenation in the optical control layer, and an oxidation inhibition member that is arranged between the optical control layer and the catalyst layer and inhibits oxidation of the optical control layer that is caused by oxygen that permeates through the catalyst layer.Type: ApplicationFiled: June 13, 2013Publication date: June 18, 2015Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Yasusei Yamada, Kazuki Yoshimura, Kazuki Tajima
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Patent number: 9059407Abstract: A method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.Type: GrantFiled: August 10, 2011Date of Patent: June 16, 2015Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
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Patent number: 9059410Abstract: The present invention provides a novel organic semiconductor material that affords efficient charge transport, under a wider range of conditions, by increasing the temperature stability and expanding the temperature range of the organic semiconductor material. In an organic semiconductor material comprising a liquid crystalline compound having substituents on the periphery of a rigid plate-like central structure, the substituents have a fluorinated phenylene group, and columns in which the molecules of the compound are accumulated in a stack are aligned hexagonally.Type: GrantFiled: June 28, 2007Date of Patent: June 16, 2015Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JNC CORPORATION, JNC PETROCHEMICAL CORPORATIONInventors: Yasuyuki Sasada, Yo Shimizu, Hirosato Monobe
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Patent number: 9059065Abstract: Provided is a method of varying the gain of an amplifying photoelectric conversion device and a variable gain photoelectric conversion device which are capable of achieving both signal processing under low illuminance and high-current processing under high light intensity, and thereby capable of securing a wide dynamic range. An amplifying photoelectric conversion part includes a photoelectric conversion element and amplification transistors forming a Darlington circuit. The sources and the drains of field-effect transistors are connected to the bases and the emitters of the amplification transistors, respectively. The gates of the field-effect transistors each function as a gain control part.Type: GrantFiled: March 18, 2013Date of Patent: June 16, 2015Assignees: National Institute of Advanced Industrial Science and Technology, RICOH COMPANY, LTD.Inventors: Yutaka Hayashi, Kazuhiro Yoneda, Hirofumi Watanabe, Katsuhiko Aisu, Takaaki Negoro, Toshitaka Ota, Yasushi Nagamune
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Publication number: 20150159058Abstract: This invention provides an adhesive agent with a stronger adhesive force that can adhere and be peeled reversibly with the irradiation of light. With the use of a liquid crystalline polymer compound containing azobenzene or a sugar alcohol derivative containing a hydroxyl group and azobenzene, a photo-reactive adhesive agent that can strongly adhere to and be peeled from a substrate reversibly with the irradiation of light can be obtained.Type: ApplicationFiled: May 7, 2013Publication date: June 11, 2015Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Haruhisa Akiyama, Masaru Yoshida, Hideki Nagai
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Publication number: 20150159691Abstract: A compact and high-precision rotating shaft holding mechanism is provided which can be utilized for a device that requires a small amount of rotation.Type: ApplicationFiled: May 18, 2012Publication date: June 11, 2015Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Takeshi Nashima, Yasuyuki Yamamoto
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Publication number: 20150155273Abstract: The present invention provides a semiconductor device that prevents destruction due to an avalanche breakdown and that has a high tolerance against breakdown by configuring the device so as to have a punch-through breakdown function therein and such that the breakdown voltage of a punch-through breakdown is lower than an avalanche breakdown voltage so that an avalanche breakdown does not occur.Type: ApplicationFiled: June 5, 2013Publication date: June 4, 2015Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi
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Publication number: 20150155165Abstract: A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer.Type: ApplicationFiled: December 12, 2014Publication date: June 4, 2015Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, HITACHI KOKUSAI ELECTRIC INC.Inventors: Masahiko HATA, Takenori OSADA, Taketsugu YAMAMOTO, Takeshi AOKI, Tetsuji YASUDA, Tatsuro MAEDA, Eiko MIEDA, Hideki TAKAGI, Yuichi KURASHIMA, Yasuo KUNII, Toshiyuki KIKUCHI, Arito OGAWA
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Patent number: 9045344Abstract: A production method in accordance with the present invention includes the steps of: providing a catalyst support layer by applying, to a substrate, a catalyst support layer coating agent obtained by dissolving in an organic solvent (i) an organometallic compound containing aluminum and/or a metal salt containing aluminum and (ii) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; providing a catalyst formation layer by applying, to the catalyst support layer, a catalyst formation layer coating agent obtained by dissolving in an organic solvent (a) an organometallic compound containing iron and/or a metal salt containing iron and (b) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; and growing an aligned carbon nanotube aggregate on the substrate by chemical vapor deposition (CVD).Type: GrantFiled: February 28, 2011Date of Patent: June 2, 2015Assignees: ZEON CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hirokazu Takai, Mitsugu Uejima, The Ban Hoang, Kenji Hata, Motoo Yumura
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Publication number: 20150144884Abstract: A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 105 or more sufficient for practical use, and prevents variations in electric properties is obtained. In a grapheme film 3, a plurality of ribbon-shaped graphenes 3a having a longitudinal edge structure of as arm chair type constitute a network structure, and the grapheme 3a includes three or more six-membered rings of carbon atoms bonded in parallel in a short direction and has a width of 0.7 nm or more.Type: ApplicationFiled: November 21, 2014Publication date: May 28, 2015Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Junichi YAMAGUCHI, Shintaro SATO
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Patent number: 9041520Abstract: A system and method are disclosed in which in a conventional non-grounding man-machine interface having no reaction base on the human body and for giving the existence of a virtual object and the impact force of a collision to a person, a haptic sensation of a torque, a force and the like can be continuously presented in the same direction, which can not be presented by only the physical characteristic of a haptic sensation presentation device. In a haptic presentation device, the rotation velocity of at least one rotator in the haptic presentation device is controlled by a control device, and a vibration, a force or a torque as the physical characteristic is controlled, so that the user is made to conceive various haptic information of the vibration, force, torque or the like.Type: GrantFiled: February 23, 2010Date of Patent: May 26, 2015Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Norio Nakamura, Yukio Fukui, Masataka Sakai