Patents Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIALS SCIENCE AND TECHNOLOGY
  • Publication number: 20150206729
    Abstract: An object is to mix multiple liquids sufficiently and then nebulize the mixed liquids while maintaining the nebulizing efficiency. A nebulizer includes a first inner tube disposed inside an outer tube and having therein a first sample passage through which a first liquid sample flows, a second inner tube disposed inside the outer tube in parallel with the first inner tube and having therein a second sample passage through which a second liquid sample flows, a membranous member disposed with a gap between the membranous member and sample outlets formed at respective ends of the inner tubes. The gap forms mixing space in which a gas passing through a gas passage converts the first and second liquid samples flowing out of the sample outlets into droplets and mixes the droplets and the membranous member has multiple holes through which the mixed liquid samples pass along with the gas.
    Type: Application
    Filed: January 15, 2015
    Publication date: July 23, 2015
    Applicants: S.T. JAPAN INC., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kazumi INAGAKI, Shin-ichiro FUJII, Shin-ichi MIYASHITA, Koichi CHIBA, Takao NAKAGAWA, Masaaki ABE, Nobuyoshi KITAGAWA, Yosuke NAKAGAWA
  • Patent number: 9082525
    Abstract: A lithium silicate-based compound according to the present invention is expressed by a general formula, Li(2?a+b)AaMn(1?x?y)CoxMySiO(4+?)Cl? (In the formula: “A” is at least one element selected from the group consisting of Na, K, Rb and Cs; “M” is at least one member selected from the group consisting of Mg, Ca, Al, Ni, Fe, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W; and the respective subscripts appear to be as follows: 0?“a”<0.2; 0?“b”<1; 0<“x”<1; 0?“y”?0.5; ?0.25?“?”?1.25; and 0?“?”?0.05). The lithium silicate-based compound is used as a positive-electrode active material for secondary battery whose discharge average voltage is higher, and which is able to sorb and desorb lithium ions.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: July 14, 2015
    Assignees: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Akira Kojima, Toshikatsu Kojima, Mitsuharu Tabuchi, Tetsuo Sakai, Takuhiro Miyuki, Junichi Niwa, Kazuhito Kawasumi, Masakazu Murase
  • Patent number: 9074278
    Abstract: Small crystal size is the issue of a conventional method for formation of a film of graphene by a thermal CVD technique using a copper foil as a substrate. A carbon film laminate is described in which graphene having a larger crystal size is formed. The carbon film laminate is configured to include a sapphire single crystal having a surface composed of terrace surfaces which are flat at the atomic level, and atomic-layer steps, a copper single crystal thin film formed by epitaxial growth on the substrate, and graphene deposited on the copper single crystal thin film, and thus enabling formation of graphene having a large crystal size.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: July 7, 2015
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masataka Hasegawa, Masatou Ishihara, Yoshinori Koga, Jaeho Kim, Kazuo Tsugawa, Sumio Iijima
  • Patent number: 9076906
    Abstract: A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: July 7, 2015
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Mutsuo Ogura, SungWoo Choi, Nobuyuki Hayama, Katsuhiko Nishida
  • Publication number: 20150187652
    Abstract: A method for producing a composite wafer by using a forming wafer having a monocrystal layer, the method comprising: (a) forming, on the monocrystal layer of the forming wafer, a sacrificial layer and a semiconductor crystal layer sequentially; (b) causing a first front surface that is the front surface of a layer formed on the forming wafer to face a second front surface that is the front surface of the transfer target wafer or of a layer formed on the transfer target wafer and is to contact the first front surface, and bonding the forming wafer and the transfer target wafer; and (c) etching the sacrificial layer, and separating the forming wafer from the transfer target wafer in a state that the semiconductor crystal layer is left on the transfer target wafer, wherein the (a) to the (c) are repeated by using the forming wafer separated in the (c).
    Type: Application
    Filed: January 28, 2015
    Publication date: July 2, 2015
    Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Taketsugu YAMAMOTO, Takeshi AOKI, Tatsuro MAEDA, Eiko MIEDA, Toshiyuki KIKUCHI, Arito OGAWA
  • Patent number: 9070941
    Abstract: [Object] The object is to provide a negative electrode material for a lithium secondary battery, wherein a sulfide-based negative electrode with water-resistant properties can exert excellent cycle characteristics and high output performance while maintaining a high discharge capacity and there is no precipitation of lithium dendrites during charge at low temperature. [Means for Solving Problems] A negative electrode material for a lithium secondary battery comprising sulfur and sulfide glass including the following components (i) and (ii): (i) at least one or more elements selected from a group consisting of Sb, As, Bi, Ge, Si, Cu, Zn, Pd, In and Zr; and (ii) at least one or more elements selected from a group consisting of Se, Te, Ga, Sn, Pb, Cd, Al, Fe, Mg, Ca, Co, Ag, Sr, P and Ba, wherein the ratio of the above components is sulfur: 40-80 mol %, (i): 1-50 mol % and (ii): 1-50 mol %, respectively.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: June 30, 2015
    Assignees: National Institute of Advanced Industrial Science and Technology, Isuzu Glass Company, Ltd.
    Inventors: Takashi Mukai, Taichi Sakamoto, Tetsuo Sakai, Kunihiko Tani, Naoto Yamashita, Koichiro Ikeda
  • Patent number: 9065139
    Abstract: Provided is a method for mass manufacturing, at low cost, of a fiber positive electrode for a lithium secondary battery, which has excellent charge/discharge cycle characteristics, and which is capable of charging/discharging with high current density, and a main active material of which is a lithium-doped transition metal oxide. The method includes the steps of: (a) forming a tubular coating of either a transition metal oxide or a transition metal hydroxide on a carbon fiber current collector; and (b) performing, in a lithium ion containing solution in a sealed system under presence of an oxidant or a reductant, heat treatment at 100 to 250° C. on the carbon fiber current collector, on which the tubular coating of either the transition metal oxide or the transition metal hydroxide is formed, to obtain a coating of a lithium-doped transition metal oxide on the carbon fiber current collector.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: June 23, 2015
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Tetsuo Sakai, Jinhan Yao, Takashi Mukai, Tomoaki Takasaki, Kazuo Tsutsumi, Kazuya Nishimura
  • Publication number: 20150166619
    Abstract: A technology which enables a high yield and convenient recovery of a protein and also enables a global protein purification is provided. A protein tag comprising an amino acid sequence of the full length or a part of MafG protein or an amino acid sequence in which amino acids serving as protease cleavage sites were inserted into the former amino acid sequence is provided. Since this protein tag can impart a high insolubility attributable to MafG protein to a protein to be tagged thereby insolubilizing the tagged protein, the tagged protein can be recovered into an insoluble fraction at a high yield.
    Type: Application
    Filed: November 21, 2012
    Publication date: June 18, 2015
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Naoki Goshima, Eriko Fukuda, Masatoshi Mori
  • Publication number: 20150171169
    Abstract: In the present invention, a p-type pillar layer constituting a super junction is formed separately into an upper layer in contact with a base layer and an underlying lower layer. The upper layer has a higher impurity concentration than the lower layer. An interface between the upper layer and the lower layer of the pillar layer and a contact point between the interface and a drift layer are located below the bottom of a trench groove. This allows depletion in an upper portion of an n-type pillar to occur at a lower voltage than in a lower portion thereof in the blocking state. Thus, the application of an electric field to an oxide film can be suppressed without sacrificing the other characteristics, and the device is successfully prevented from being broken.
    Type: Application
    Filed: April 23, 2013
    Publication date: June 18, 2015
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventor: Shinsuke Harada
  • Publication number: 20150168801
    Abstract: A reflection-type optical control element has an optical control layer whose state is reversibly changed between a transparent state caused by hydrogenation and a reflective state caused by dehydrogenation, a catalyst layer that accelerates the hydrogenation and the dehydrogenation in the optical control layer, and an oxidation inhibition member that is arranged between the optical control layer and the catalyst layer and inhibits oxidation of the optical control layer that is caused by oxygen that permeates through the catalyst layer.
    Type: Application
    Filed: June 13, 2013
    Publication date: June 18, 2015
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Yasusei Yamada, Kazuki Yoshimura, Kazuki Tajima
  • Patent number: 9059407
    Abstract: A method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: June 16, 2015
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
  • Patent number: 9059410
    Abstract: The present invention provides a novel organic semiconductor material that affords efficient charge transport, under a wider range of conditions, by increasing the temperature stability and expanding the temperature range of the organic semiconductor material. In an organic semiconductor material comprising a liquid crystalline compound having substituents on the periphery of a rigid plate-like central structure, the substituents have a fluorinated phenylene group, and columns in which the molecules of the compound are accumulated in a stack are aligned hexagonally.
    Type: Grant
    Filed: June 28, 2007
    Date of Patent: June 16, 2015
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JNC CORPORATION, JNC PETROCHEMICAL CORPORATION
    Inventors: Yasuyuki Sasada, Yo Shimizu, Hirosato Monobe
  • Patent number: 9059065
    Abstract: Provided is a method of varying the gain of an amplifying photoelectric conversion device and a variable gain photoelectric conversion device which are capable of achieving both signal processing under low illuminance and high-current processing under high light intensity, and thereby capable of securing a wide dynamic range. An amplifying photoelectric conversion part includes a photoelectric conversion element and amplification transistors forming a Darlington circuit. The sources and the drains of field-effect transistors are connected to the bases and the emitters of the amplification transistors, respectively. The gates of the field-effect transistors each function as a gain control part.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: June 16, 2015
    Assignees: National Institute of Advanced Industrial Science and Technology, RICOH COMPANY, LTD.
    Inventors: Yutaka Hayashi, Kazuhiro Yoneda, Hirofumi Watanabe, Katsuhiko Aisu, Takaaki Negoro, Toshitaka Ota, Yasushi Nagamune
  • Publication number: 20150159058
    Abstract: This invention provides an adhesive agent with a stronger adhesive force that can adhere and be peeled reversibly with the irradiation of light. With the use of a liquid crystalline polymer compound containing azobenzene or a sugar alcohol derivative containing a hydroxyl group and azobenzene, a photo-reactive adhesive agent that can strongly adhere to and be peeled from a substrate reversibly with the irradiation of light can be obtained.
    Type: Application
    Filed: May 7, 2013
    Publication date: June 11, 2015
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Haruhisa Akiyama, Masaru Yoshida, Hideki Nagai
  • Publication number: 20150159691
    Abstract: A compact and high-precision rotating shaft holding mechanism is provided which can be utilized for a device that requires a small amount of rotation.
    Type: Application
    Filed: May 18, 2012
    Publication date: June 11, 2015
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Takeshi Nashima, Yasuyuki Yamamoto
  • Publication number: 20150155273
    Abstract: The present invention provides a semiconductor device that prevents destruction due to an avalanche breakdown and that has a high tolerance against breakdown by configuring the device so as to have a punch-through breakdown function therein and such that the breakdown voltage of a punch-through breakdown is lower than an avalanche breakdown voltage so that an avalanche breakdown does not occur.
    Type: Application
    Filed: June 5, 2013
    Publication date: June 4, 2015
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi
  • Publication number: 20150155165
    Abstract: A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer.
    Type: Application
    Filed: December 12, 2014
    Publication date: June 4, 2015
    Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Masahiko HATA, Takenori OSADA, Taketsugu YAMAMOTO, Takeshi AOKI, Tetsuji YASUDA, Tatsuro MAEDA, Eiko MIEDA, Hideki TAKAGI, Yuichi KURASHIMA, Yasuo KUNII, Toshiyuki KIKUCHI, Arito OGAWA
  • Patent number: 9045344
    Abstract: A production method in accordance with the present invention includes the steps of: providing a catalyst support layer by applying, to a substrate, a catalyst support layer coating agent obtained by dissolving in an organic solvent (i) an organometallic compound containing aluminum and/or a metal salt containing aluminum and (ii) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; providing a catalyst formation layer by applying, to the catalyst support layer, a catalyst formation layer coating agent obtained by dissolving in an organic solvent (a) an organometallic compound containing iron and/or a metal salt containing iron and (b) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; and growing an aligned carbon nanotube aggregate on the substrate by chemical vapor deposition (CVD).
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: June 2, 2015
    Assignees: ZEON CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hirokazu Takai, Mitsugu Uejima, The Ban Hoang, Kenji Hata, Motoo Yumura
  • Publication number: 20150144884
    Abstract: A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 105 or more sufficient for practical use, and prevents variations in electric properties is obtained. In a grapheme film 3, a plurality of ribbon-shaped graphenes 3a having a longitudinal edge structure of as arm chair type constitute a network structure, and the grapheme 3a includes three or more six-membered rings of carbon atoms bonded in parallel in a short direction and has a width of 0.7 nm or more.
    Type: Application
    Filed: November 21, 2014
    Publication date: May 28, 2015
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Junichi YAMAGUCHI, Shintaro SATO
  • Patent number: 9041520
    Abstract: A system and method are disclosed in which in a conventional non-grounding man-machine interface having no reaction base on the human body and for giving the existence of a virtual object and the impact force of a collision to a person, a haptic sensation of a torque, a force and the like can be continuously presented in the same direction, which can not be presented by only the physical characteristic of a haptic sensation presentation device. In a haptic presentation device, the rotation velocity of at least one rotator in the haptic presentation device is controlled by a control device, and a vibration, a force or a torque as the physical characteristic is controlled, so that the user is made to conceive various haptic information of the vibration, force, torque or the like.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: May 26, 2015
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Nakamura, Yukio Fukui, Masataka Sakai