Patents Assigned to National Institute of Information and Commnications Technology
  • Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
    Patent number: 11264241
    Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: March 1, 2022
    Assignees: TAMURA CORPORATION, SICOXS Corporation, National Institute of Information and Commnications Technology
    Inventors: Akito Kuramata, Shinya Watanabe, Kohei Sasaki, Kuniaki Yagi, Naoki Hatta, Masataka Higashiwaki, Keita Konishi