Patents Assigned to National Institute of Information and Communications Technology, Incorporated Adm
  • Gan-Based Field Effect Transistor and Production Method Therefor
    Publication number: 20070295990
    Abstract: A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulating film (10).
    Type: Application
    Filed: August 26, 2005
    Publication date: December 27, 2007
    Applicant: National Institute of Information and Communications Technology, Incorporated Adm
    Inventor: Masataka Higashiwaki